Atmospheric pressure chemical vapor deposition (APCVD) grown bi‐layer graphene transistor characteristics at high temperature

Abstract

1 Introduction Wide band gap semiconductors like gallium nitride (GaN) and silicon carbide (SiC) are currently employed in high temperature power transistor applications owing to their superior combination of characteristics including mobility, breakdown voltage, cutoff frequency, and operating temperature [1]. However, fabricating these devices using high vacuum epitaxial growth techniques (i.e. molecular beam epitaxy, MBE or metal organic chemical vapor deposition, MOCVD) is often cost prohibitive. Recently, high mobility graphene transistors have exhibited cut-off frequencies in the GHz regime suggesting that they are promising candidate for future low cost RF electronic applications [2]. However, the behavior of graphene devices needs to be evaluated at elevated temperatures in order to understand its behavior for harsh environment applications. The technique used in this study, APCVD, has emerged as both a cheap and scalable approach to graphene synthesis. Apart from the consideration of industrial applications, a great portion of CVD derived graphene studies have reported on graphene's growth mechanism [3,4], electronic properties [5][6][7], substrate interface [8,9] and device fabrication issues [10,11]. However, the lack of studying CVD based graphene functionality at elevated temperatures is a roadblock to realize low cost CVD graphene devices for use in high temperature

Direct observation of electrically induced Pauli paramagnetism in single-layer graphene using ESR spectroscopy

“…The observation of the σ 2D minimum indicates an existence of the charge neutral point, namely, the Dirac point in the graphene transistors. Such behavior is consistent with that reported for single-layer graphene transistors 32 33 . We define the V G at the charge neutral point as V CNP .…”

Atmospheric Pressure Chemical Vapor Deposition of Graphene

“…[63,93] APCVD-based bilayer graphene growth is another great issue for optimum electronic and photonic devices because of higher carrier mobility and wider band gap by perpendicular electric field compared with single-layer graphene. [102,103] The synthesis of bilayer graphene faced many drawbacks owing to limited grain size and nonsynchronic growth between the first and the second graphene layer. In 2016, Sun et al reported a cooling-APCVD to growth of bilayer graphene on polycrystalline Cu (Figure 10).…”

Substrate free synthesis of graphene nanoflakes by atmospheric pressure chemical vapour deposition using Ni powder as a catalyst

“…Among the different synthesis routes, CVD has gained popularity for the production of graphene due to its economical and scalable approach along with its compatibility with current silicon technology. Many researchers have employed atmospheric/ambient pressure CVD to synthesize graphene using either Cu [11][12][13] or Ni [14][15][16][17] as a catalyst. The Ni-catalysed atmospheric pressure chemical vapour deposition (APCVD) synthesis of graphene generally employed either single or polycrystalline Ni thin films deposited on a suitable substrate.…”