Atmospheric pressure atomic layer deposition of iron oxide nanolayer on the Al2O3/SiO2/Si substrate for mm-tall vertically aligned CNTs growth

Vahdatifar, Sahar; Mortazavi, Yadollah; Khodadadi, Abbas Ali

doi:10.1007/s10853-020-04922-x

Cited by 9 publications

(2 citation statements)

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“…Note that the APALD process is different from traditional vacuum ALD equipment, in the sense that it has a higher film deposition rate, which potentially can increase the production rate and reduce the cost of vacuum equipment investment. For current manufacturers, it is easy to replace the production line equipment with one of high throughput to increase the production capacity of solar cells [19,21]. The key design of the self-developed APALD equipment is the introduction of a spatial matrix nozzle module design.…”

Section: Al 2 O 3 Film Growth Via Apald Of Tma and H 2 Omentioning

confidence: 99%

“…The space-divided array nozzle module system is used to develop APALD; that is, the reactant feed is no longer alternately sent to a reaction chamber, but the reaction chamber is divided into multiple different sections. These reaction sections are separated by an internal air curtain, and the air shield also acts as a compartment between the reaction sections to prevent cross-reaction and parasitic precipitation on the reaction chamber wall [19,20]. The very design improves the deposition reaction and the speed of the precursors purging, thereby greatly improving the deposition efficiency without losing the usual advantages of ALD [21].…”

Section: Introductionmentioning

confidence: 99%

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Study the Passivation Characteristics of Microwave Annealing Applied to APALD Deposited Al2O3 Thin Film

et al. 2021

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In this study, a self-developed atmospheric pressure atomic layer deposition (APALD) system is used to deposit Al2O3 passivation film, along with the use of precursor combinations of Al(CH3)3/H2O to improve its passivation characteristics through a short-time microwave post-annealing process. Comparing the unannealed and microwave-annealed samples whose temperature is controlled at 200–500 °C, APALD non-vacuum deposited film can be realized with a higher film deposition rate, which is beneficial for increasing the production throughput while at the same time reducing the operating cost of vacuum equipment at hand. Since the microwave has a greater penetration depth during the process, the resultant thermal energy provided can be spread out evenly to the entire wafer, thereby achieving the effect of rapid annealing. The film thickness is subsequently analyzed by TEM, whereas the chemical composition is verified by EDS and XPS. The negative fixed charge and interface trap density are analyzed by the C-V measurement method. Finally, the three major indicators of τeff, SRV, and IVoc are analyzed by QSSPC to duly verify the excellent passivation performance.

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Section: Al 2 O 3 Film Growth Via Apald Of Tma and H 2 Omentioning

confidence: 99%