Atmosphere sensitive CuO/ZnO junctions

Baek, Kwang Ki; Tuller, Harry L.

doi:10.1016/0167-2738(94)00172-o

Cited by 47 publications

(18 citation statements)

References 12 publications

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“…9), the optical band gap Eg of the typical CuSCN film is about 3.3 eV. Jaffe et al [40] predicted In the case of the α-Fe 2 O 3 /CuSCN heterojunction (Fig.12) the current density in the dark is negligible in all the potential range, while under illumination the photocurrent starts increasing continuously with the applied potential from 0.2 V; it is always higher than that observed for reported earlier in case of TiO 2 /Si [42] , CuO/ZnO [43] , CuFe 2 O 4 /TiO 2 [44] , Bi 2 O 3 /BiVO 4 [45] , and MoS 2 /CdS [46] .…”

Section: Optical Properties Of Cuscnmentioning

confidence: 67%

Electrochemical Fabrication and Characterization of p-CuSCN/n-Fe₂O₃Heterojunction Devices for Hydrogen Production

Bouhjar

Ullah

Chourou

et al. 2017

J. Electrochem. Soc.

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p-CuSCN/n-Fe 2 O 3 heterojunctions were electrochemically prepared by sequentially depositing α-Fe 2 O 3 and CuSCN films on FTO (SnO 2 :F) substrates. The α-Fe 2 O 3 and CuSCN films and the α-Fe 2 O 3 /CuSCN heterojunctions were characterized by Field Emission Scanning Electron Microscopy (FESEM), Energy-Dispersive X-ray spectroscopy (EDX), and X-Ray Diffraction (XRD). Pure crystalline CuSCN films were electrochemically deposited on α-Fe 2 O 3 films by fixing the SCN/Cu molar ratio in the electrolytic bath to 1:1.5 at 60 °C and at a potential of-0.4 V. The photocurrent measurements showed an increase of the intrinsic surface states or defects at the α-Fe 2 O 3 /CuSCN interface. The photoelectrochemical performance of the α-Fe 2 O 3 /CuSCN heterojunction was examined by chronoamperometry and linear sweep voltammetry techniques. It was found that the α-Fe 2 O 3 /CuSCN structure exhibits a higher photoelectrochemical activity when compared to α-Fe 2 O 3 thin films. The highest photocurrent density was obtained for α-Fe 2 O 3 /CuSCN films in 1 M NaOH electrolyte. This high photoactivity was attributed to the high active surface area and to the external applied bias;, which favors the transfer and the separation of the photogenerated charge carriers in α-Fe 2 O 3 /CuSCN heterojunction devices. The flat band potential and the donor density were found to be maximal for the heterojunction. These results suggest a substantial potential to achieve heterojunction thin films in photoelectrochemical water splitting applications.

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Section: Optical Properties Of Cuscnmentioning

confidence: 67%

Electrochemical Fabrication and Characterization of p-CuSCN/n-Fe₂O₃Heterojunction Devices for Hydrogen Production

Bouhjar

Ullah

Chourou

et al. 2017

J. Electrochem. Soc.

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“…The heterojunction of these two important metal oxides CuO/ZnO was studied for junctions obtained by either mechanical compression or by sputtering procedure, and the samples were further used as gas sensors [22][23][24][25][26]. Although heterojunctions of CuO/ZnO obtained using these procedures exhibited rectifying characteristics they have been assembled in a rather primitive way as mentioned above, e.g.…”

Section: Introductionmentioning

confidence: 99%

Optical and current transport properties of CuO/ZnO nanocoral p–n heterostructure hydrothermally synthesized at low temperature

et al. 2012

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We demonstrate the synthesis, and investigate the electrical and optical characteristics of "nanocorals" (NCs) composed of CuO/ZnO grown at low temperature through the hydrothermal approach. High density CuO nanostructures (NSs) were selectively grown on ZnO nanorods (NRs). The synthesized NCs were used to fabricate p-n heterojunctions that were investigated by the current density-voltage (J-V) and the capacitance-voltage (C-V) techniques. It was found that the NCs heterojunctions exhibit a well-defined diode behavior with a threshold voltage of about 1.54 V and relatively high rectification factor of ~ 760. The detailed forward J-V characteristics revealed that the current transport is controlled by an ohmic behavior for V ≤ 0.15 V, whereas at moderate voltages 1.46 ≤ V < 1.5 the current follows J α exp (βV) relationship. At higher voltages (≥ 1.5 V) the current follows the relation J α V 2 , indicating that the space-charge-limited current mechanism is the dominant current transport. The C-V measurement indicated that the NCs diode has an abrupt junction. The grown CuO/ZnO NCs exhibited broad light absorption range that is covering the UV and the entire visible part of the spectrum.

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“…Doped ZnO has been investigated for detecting H 2 , O 2 [6], while undoped ZnO has been used either in composites [7] or etherojunctions [8] with other semiconducting compounds for monitoring H 2 and CO.…”

Section: Introductionmentioning

confidence: 99%

Influence of some donor–acceptor couples on surface conductivity of aluminum doped zinc oxide

Mezzanotte

Palombari

2005

Sensors and Actuators B: Chemical

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Atmosphere sensitive CuO/ZnO junctions

Cited by 47 publications

References 12 publications

Electrochemical Fabrication and Characterization of p-CuSCN/n-Fe₂O₃Heterojunction Devices for Hydrogen Production

Electrochemical Fabrication and Characterization of p-CuSCN/n-Fe₂O₃Heterojunction Devices for Hydrogen Production

Optical and current transport properties of CuO/ZnO nanocoral p–n heterostructure hydrothermally synthesized at low temperature

Influence of some donor–acceptor couples on surface conductivity of aluminum doped zinc oxide

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Atmosphere sensitive CuO/ZnO junctions

Cited by 47 publications

References 12 publications

Electrochemical Fabrication and Characterization of p-CuSCN/n-Fe2O3Heterojunction Devices for Hydrogen Production

Electrochemical Fabrication and Characterization of p-CuSCN/n-Fe2O3Heterojunction Devices for Hydrogen Production

Optical and current transport properties of CuO/ZnO nanocoral p–n heterostructure hydrothermally synthesized at low temperature

Influence of some donor–acceptor couples on surface conductivity of aluminum doped zinc oxide

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Electrochemical Fabrication and Characterization of p-CuSCN/n-Fe₂O₃Heterojunction Devices for Hydrogen Production

Electrochemical Fabrication and Characterization of p-CuSCN/n-Fe₂O₃Heterojunction Devices for Hydrogen Production