Athermal synchronization of laser source with WDM filter in a silicon photonics platform

Li, Nanxi; Su, Zhan; Purnawirman,; Magden, Emir Salih; Poulton, Christopher V.; Ruocco, Alfonso; Singh, Neetesh; Byrd, Matthew J.; Bradley, Jonathan D. B.; Leake, Gerald; Watts, Michael R.

doi:10.1063/1.4984022

Cited by 34 publications

(15 citation statements)

References 38 publications

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“…Monolithically integrated erbium-doped waveguide lasers have been demonstrated with both continuous-wave and pulsed lasing using erbium co-sputtered with Al 2 O 3 as a host [33,[40][41][42][43][44][45]. The low thermo-optic coefficient of Al 2 O 3 enables robust operation of the laser over a wide temperature range [46,47], important for control-free WDM systems [48]. However, previously demonstrated lasers could not be actively tuned.…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Vermeulen

Magden

et al. 2018

Opt. Express

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A tunable laser source is a crucial photonic component for many applications, such as spectroscopic measurements, wavelength division multiplexing (WDM), frequency-modulated light detection and ranging (LIDAR), and optical coherence tomography (OCT). In this article, we demonstrate the first monolithically integrated erbium-doped tunable laser on a complementary-metal-oxide-semiconductor (CMOS)-compatible silicon photonics platform. Erbium-doped AlO sputtered on top is used as a gain medium to achieve lasing. The laser achieves a tunability from 1527 nm to 1573 nm, with a >40 dB side mode suppression ratio (SMSR). The wide tuning range (46 nm) is realized with a Vernier cavity, formed by two SiN microring resonators. With 107 mW on-chip 980 nm pump power, up to 1.6 mW output lasing power is obtained with a 2.2% slope efficiency. The maximum output power is limited by pump power. Fine tuning of the laser wavelength is demonstrated by using the gain cavity phase shifter. Signal response times are measured to be around 200 μs and 35 µs for the heaters used to tune the Vernier rings and gain cavity longitudinal mode, respectively. The linewidth of the laser is 340 kHz, measured via a self-delay heterodyne detection method. Furthermore, the laser signal is stabilized by continuous locking to a mode-locked laser (MLL) over 4900 seconds with a measured peak-to-peak frequency deviation below 10 Hz.

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Section: Introductionmentioning

confidence: 99%

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Vermeulen

Magden

et al. 2018

Opt. Express

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“…The thermal stability of our DFB is investigated in [22,23] showing a temperaturedependent shift of 0.02 nm/°C, which is more than two times lower than the thermal wavelength shift reported for hybrid lasers [24][25][26][27]. Such small wavelength shift is contributed by the low thermo-optic coefficients of the Al 2 O 3 film and the SiN x waveguide.…”

Section: Qps-dfbmentioning

confidence: 80%

Ultra-narrow-linewidth Al_2O_3:Er^3+ lasers with a wavelength-insensitive waveguide design on a wafer-scale silicon nitride platform

Purnawirman

Magden

et al. 2017

Opt. Express

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We report ultra-narrow-linewidth erbium-doped aluminum oxide (AlO:Er) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiN) segments buried under silicon dioxide (SiO) with a layer AlO:Er deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infra-red wavelengths (950-2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 ± 0.3 kHz for the DPS-DFB laser, as compared to ΔνQPS = 30.4 ± 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (R-SHDI).

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“…Photolithography is currently used as a part of the standard complementary metal-oxide-semiconductor (CMOS) fabrication process in the microelectronics industry. Besides, it has been widely used in silicon photonics for optical and electronic components patterning [14][15][16][17][18][19]. Recently, it has also been applied for large-area metasurface fabrication [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Large-area pixelated metasurface beam deflector on a 12-inch glass wafer for random point generation

Dong

et al. 2019

Nanophotonics

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Metasurface-based beam deflector, as an important optical element to bend the light propagation direction, has drawn a lot of interests in research to achieve miniaturization of devices and reduction of system complexity. Based on the 12-inch immersion lithography technology, in this work, an ultra-thin and large-area pixelated metasurface beam deflector with a footprint of 2500 × 2500 μm, formed by nanopillars with diameters from 221 to 396 nm, is demonstrated on a 12-inch glass wafer. The 21 × 21 array of deflectors is designed to bend the input light in different directions and to generate 441 random points. In addition, the layer transfer on the 12-inch glass wafer makes the device working in transmission mode at a 940-nm wavelength. The random point array generated from the experiment shows good match with the design. This pixelated metasurface beam deflector can generate random points simultaneously and has potential to make beam steering by switching each pixel of the beam deflector, which can be applied on motion detection, facial recognition, and light detection and ranging.

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Athermal synchronization of laser source with WDM filter in a silicon photonics platform

Cited by 34 publications

References 38 publications

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Ultra-narrow-linewidth Al_2O_3:Er^3+ lasers with a wavelength-insensitive waveguide design on a wafer-scale silicon nitride platform

Large-area pixelated metasurface beam deflector on a 12-inch glass wafer for random point generation

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