In this Letter, we demonstrate a 1 × 4 low-crosstalk silicon photonics cascaded arrayed waveguide grating, which is fabricated on a silicon-on-insulator wafer with a 220-nm-thick top silicon layer and a 2 μm buried oxide layer. The measured on-chip transmission loss of this cascaded arrayed waveguide grating is ∼4.0 dB, and the fiber-towaveguide coupling loss is 1.8 dB/facet. The measured channel spacing is 6.4 nm. The adjacent crosstalk by characterization is very low, only −33.2 dB. Compared to the normal single silicon photonics arrayed waveguide grating with a crosstalk of ∼ −12.5 dB, the crosstalk of more than 20 dB is dramatically improved in this cascaded device.OCIS [1] , a planar concave grating [2,3] , an arrayed waveguide grating (AWG) [4] , and so on. Compared to other basic structures, AWGs have a better optical performance, such as low insertion loss, good channel spacing uniformity, low crosstalk, etc. So, AWG is a widely used multiplexer/de-multiplexer in optical communication systems. Due to the compatibility of the refractive index with standard optical fibers, silica-based AWGs are the most common commercial multiplexer/ de-multiplexer. However, it is hard to realize monolithic integration with other high-speed active devices, although silica-based AWGs have good optical performances as a multiplexer/de-multiplexer.In recent decades, silicon photonics have attracted much attention because silicon materials can be used to fabricate monolithic integration circuits with passive/ active devices, and the process is compatible with complementary metal oxide semiconductor technology [5][6][7] . Silicon-based AWGs on silicon-on-insulator (SOI) wafers with a several-microns-thick top silicon layers were demonstrated in the early 2000s. For example, a turningmirror-integrated AWG with a 4.25-μm-thick top silicon layer was reported, and it had a crosstalk of −23 dB [8] . An AWG-based monolithic integration of a mulitiplexer was presented on an SOI wafer with a 2.5-μm-thick top silicon layer, and its crosstalk was better than −25 dB [9] . However, it is hard to achieve high-speed active devices on such micron-scale SOI wafers, and the footprint size is big because of the big bend radius of this kind of silicon waveguide. Subsequently, more attention was focused on silicon nanowire devices. Many nanowire silicon photonics passive/active devices with good performances have been demonstrated on an SOI platform with a thin (220 nm typically) top silicon layer, including mode size converters [10] , ring-based devices [11] , high-speed modulators [12] , high-speed photo-detectors [13] , etc. Silicon nanowire AWGs were also presented in the past decade. In Ref.[14], a compact nanowire AWG was reported. The insertion loss was 2.2 dB, and the crosstalk was −20 dB. A 12-channel flattened-spectral-response AWG was presented on an SOI wafer with a 220-nm-thick top silicon layer, and the crosstalk was −17 dB [15] . In Ref.[16], an athermal silicon nanowire AWG was demonstrated, and the wavelength temperature dependen...