2004
DOI: 10.1063/1.1757930
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At-Wavelength Interferometry of High-NA Diffraction-Limited EUV Optics

Abstract: Abstract. Recent advances in all-reflective diffraction-limited optical systems designed for extreme ultraviolet (EUV) lithography have pushed numerical aperture (NA) values from 0.1 to 0.3, providing Rayleigh resolutions of 27-nm. Worldwide, several high-NA EUV optics are being deployed to serve in the development of advanced lithographic techniques required for EUV lithography, including the creation and testing of new, high-resolution photoresists. One such system is installed on an undulator beamline at La… Show more

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