Asymmetrical Doherty power architecture with an integrated driver stage in the auxiliary branch

Piazzon, Luca; Colantonio, Paolo; Giannini, F.; Giofrè, Rocco

doi:10.1002/mmce.20791

Cited by 9 publications

(5 citation statements)

References 20 publications

(35 reference statements)

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“…In order to achieve better trade-off between linearity and efficiency, various modifications have been proposed in Doherty design including second harmonic injection [19], Symmetric Doherty design amplifiers [20], and Asymmetric Doherty design [21] [22]. Second harmonic injection improves the linearity for narrow band signal but is not suitable for wideband application.…”

Section: Comparison Of Various Doherty Configurationsmentioning

confidence: 99%

Modified Output Combining 3-Stage Doherty Power Amplifier Design for LTE Micro eNodeB

Shah¹,

Thakker²,

Dalwadi³

et al. 2015

IJWMT

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This paper presents a highly efficient modified output combining 3-stage Doherty Power Amplifier (DPA) design using low power LDMOS transistor for Band 40, TD-LTE Micro eNodeB. In this design, modified output combining technique has been used in the output section which meets the output power requirements of Micro eNodeB which cannot be achieved by conventional 3-stage DPA. The modified DPA design achieves 65.3% power added efficiency (PAE) at 39 dBm average output power with 20 MHz LTE signal using 15 watt LDMOS Transistor. 3-stage modified output combining technique increases the linear output power by 1.1 dB and increases the Gain flatness versus power level. The use of Digital Pre-Distortion (DPD) along with modified 3-stage DPA design achieves the linearity requirements as per the 3GPP specifications. The modified DPA combining technique has provided potential economical solution by using low power LDMOS transistor with an advantage of high efficiency.

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Section: Comparison Of Various Doherty Configurationsmentioning

confidence: 99%

Modified Output Combining 3-Stage Doherty Power Amplifier Design for LTE Micro eNodeB

Shah¹,

Thakker²,

Dalwadi³

et al. 2015

IJWMT

View full text Add to dashboard Cite

show abstract

“…Among all of the proposed PA topologies, DPA technique has received a wide attention by virtue of its simple structure, easy implementation, and high performance. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] However, the bandwidth of traditional DPA is mainly limited by the one-quarter wavelength transmission line, the offset line, the output matching network of the carrier PA, and the transistor package components. [13][14][15][16] Therefore, over the past decades, modified DPA architectures have been developed in order to achieve a wider bandwidth.…”

Section: Introductionmentioning

confidence: 99%

“…The goal of PA designers is maintaining high efficiency in a wide range of frequency bands, while keeping large OBO range at the same time. In order to achieve this target, many related studies have been carried out, including some new PA architectures, for example, outphasing and Doherty power amplifier (DPA) 3–23 . Among all of the proposed PA topologies, DPA technique has received a wide attention by virtue of its simple structure, easy implementation, and high performance 6–23 …”

Section: Introductionmentioning

confidence: 99%

Application ofX‐parametermodel of gallium nitride device for a continuous broadband Doherty power amplifier design

Crupi

et al. 2022

Int J Numerical Modelling

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The design of a continuous broadband Doherty power amplifier (DPA) based on an X-parameter model is presented in this work. The broadband load-pull X-parameter model is extracted at both the package plane and current generate plane of the device under test. The model cannot only predict the fundamental and harmonic nonlinear behavioral accurately, but also find the optimal output power and drain efficiency (DE) region of the Smith chart precisely, thereby assisting DPA design. A 10-W gallium nitride packaged transistor from Wolfspeed is utilized in this design. The fabricated DPA reached a saturation output power of 44.3 dBm, with a saturation DE over 68% and a 6 dB output power back-off efficiency over 51% in the frequency range of 1.1-1.8 GHz, verifying experimentally the effectiveness of the proposed design methodology. K E Y W O R D Scontinuous broadband power amplifier, Doherty power amplifier, gallium nitride, loadpull, RF power transistor, X-parameter model

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“…To further improve the back-off efficiency, various DPAs, such as asymmetric DPAs and multistage DPAs, have been investigated to achieve large BOP range [13][14][15][16]. These two kinds of DPAs utilize excessive modulation current of the peaking amplifier to achieve enlarged load span of the carrier amplifier for extended BOP range, leading to tradeoffs between design complexity, cost, and power utilization factor.…”

Section: Introductionmentioning

confidence: 99%

A Doherty Power Amplifier with Large Back‐Off Power Range Using Integrated Enhancing Reactance

Kong

Xia

Meng

et al. 2018

Wireless Communications and Mobile Computing

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A symmetric Doherty power amplifier (DPA) based on integrated enhancing reactance (IER) was proposed for large back-off applications. The IER was generated using the peaking amplifier with the help of a desired impedance transformation in the low-power region to enhance the back-off efficiency of the carrier amplifier. To convert the impedances properly, both in the low-power region and at saturation, a two-impedance matching method was employed to design the output matching networks. For verification, a symmetric DPA with large back-off power range over 2.2–2.5 GHz was designed and fabricated. Measurement results show that the designed DPA has the 9 dB back-off efficiency of higher than 45%, while the saturated output power is higher than 44 dBm over the whole operation bandwidth. When driven by a 20 MHz LTE signal, the DPA can achieve good average efficiency of around 50% with adjacent channel leakage ratio of about –50 dBc after linearization over the frequency band of interest. The linearity improvement of the DPA for multistandard wireless communication system was also verified with a dual-band modulated signal.

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Asymmetrical Doherty power architecture with an integrated driver stage in the auxiliary branch

Cited by 9 publications

References 20 publications

Modified Output Combining 3-Stage Doherty Power Amplifier Design for LTE Micro eNodeB

Modified Output Combining 3-Stage Doherty Power Amplifier Design for LTE Micro eNodeB

Application ofX‐parametermodel of gallium nitride device for a continuous broadband Doherty power amplifier design

A Doherty Power Amplifier with Large Back‐Off Power Range Using Integrated Enhancing Reactance

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