Asymmetric MQW semiconductor optical amplifier with low-polarization sensitivity of over 90-nm bandwidth

Nkanta, Julie E.; Maldonado-Basilio, Ramón; Abdul-Majid, Sawsan; Zhang, Jessica; Hall, Trevor J.

doi:10.1117/12.2036820

Cited by 4 publications

(5 citation statements)

References 16 publications

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“…From Equations (1), ( 5) and ( 6), we can see that the gain of the quantum well on TE and TM modes can be changed by the tensor-strain quantum well structure. Therefore, the gain difference between the TE and TM modes due to the waveguide structure can be compensated for using the strained QW structure, which can make the gain of the device in TE and TM modes similar and realize polarization insensitivity [6,77]. In 2008, Morito K's group reported a polarizationinsensitive SOA based on GaInNAs-GaInAs strained multiple QWs.…”

Section: Polarization Insensitivitymentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.

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Section: Polarization Insensitivitymentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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“…The SOA designed in this paper is compared with the SOA reported in the literature as shown in Table 2 [16][17][18][19][20]. Upon comparison, it is evident that the SOA designed in this study holds advantages in both output power and gain bandwidth.…”

Section: Discussionmentioning

confidence: 90%

Semiconductor Optical Amplifiers with Wide Gain Bandwidth and Enhanced Polarization Insensitivity Based on Tensile-Strained Quantum Wells

Tang,

Zhang,

Yang

et al. 2024

Sensors

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The paper presents a wide-bandwidth, low-polarization semiconductor optical amplifier (SOA) based on strained quantum wells. By enhancing the material gain of quantum wells for TM modes, we have extended the gain bandwidth of the SOA while reducing its polarization sensitivity. Through a combination of tilted waveguide design and cavity surface optical thin film design, we have effectively reduced the cavity surface reflectance of the SOA, thus decreasing device transmission losses and noise figure. At a wavelength of 1550 nm and a drive current of 1.4 A, the output power can reach 188 mW, with a small signal gain of 36.4 dB and a 3 dB gain bandwidth of 128 nm. The linewidth broadening is only 1.032 times. The polarization-dependent gain of the SOA is below 1.4 dB, and the noise figure is below 5.5 dB. The device employs only I-line lithography technology, offering simple fabrication processes and low costs yet delivering outstanding and stable performance. The designed SOA achieves wide gain bandwidth, high gain, low polarization sensitivity, low linewidth broadening, and low noise, promising significant applications in the wide-bandwidth optical communication field across the S + C + L bands.

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“…When the input power was −20 dBm, the PDG was less than 0.5 dB, with a peak gain of 20 dB. The saturated output power for the TE mode and the TM mode were 18 dBm and 22 dBm, respectively, with a 3 dB gain bandwidth of 100 nm [ 31 ]. In 2016, Huazhong University of Science and Technology proposed an integrated InGaAsP-InP/SOI polarization-insensitive SOA operating at the 1.55 μm wavelength band.…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, asymmetric MQW (AMQW) structures have demonstrated greater spectral broadening capabilities than symmetric MQW structures [ 30 ]. At input powers of −10 dBm and −20 dBm, an SOA with an AMQW structure achieved a maximum gain of 20 dB at 1360 nm with a polarization sensitivity of less than 3 dB [ 31 ].…”

Section: Introductionmentioning

confidence: 99%

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

Zhang,

Tang

et al. 2024

Nanomaterials

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Polarization-insensitive semiconductor optical amplifiers (SOAs) in all-optical networks can improve the signal-light quality and transmission rate. Herein, to reduce the gain sensitivity to polarization, a multi-quantum-well SOA in the 1550 nm band is designed, simulated, and developed. The active region mainly comprises the quaternary compound InGaAlAs, as differences in the potential barriers and wells of the components cause lattice mismatch. Consequently, a strained quantum well is generated, providing the SOA with gain insensitivity to the polarization state of light. In simulations, the SOA with ridge widths of 4 µm, 5 µm, and 6 µm is investigated. A 3 dB gain bandwidth of >140 nm is achieved with a 4 µm ridge width, whereas a 6 µm ridge width provides more output power and gain. The saturated output power is 150 mW (21.76 dB gain) at an input power of 0 dBm but increases to 233 mW (13.67 dB gain) at an input power of 10 dBm. The polarization sensitivity is <3 dBm at −20 dBm. This design, which achieves low polarization sensitivity, a wide gain bandwidth, and high gain, will be applicable in a wide range of fields following further optimization.

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Asymmetric MQW semiconductor optical amplifier with low-polarization sensitivity of over 90-nm bandwidth

Cited by 4 publications

References 16 publications

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Semiconductor Optical Amplifiers with Wide Gain Bandwidth and Enhanced Polarization Insensitivity Based on Tensile-Strained Quantum Wells

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

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