Asymmetric magnetoresistance of nanowires with perpendicular anisotropy seen as a contribution from the contacts

Nguyen, V. D.; Vila, Laurent; Marty, A.; Warin, P.; Vergnaud, C.; Jamet, M.; Notin, L.; Beigné, C.; Attané, J. P.

doi:10.1063/1.4804146

Cited by 6 publications

(3 citation statements)

References 16 publications

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“…The butterfly-shaped MR in the p-type regime is the conventional behavior associated with the suppression of spin scattering by magnetic field [24,55]. And the linear MR seems like that in the system hosting electron-magnon scattering [56][57][58][59][60]. When the temperature is raised to above T N , the direction of local moments is random so that the spinwave is absent and the magnon-related negative MR vanishes.…”

Section: Resultsmentioning

confidence: 99%

Gate-tunable magnetoresistance in six-septuple-layer MnBi₂Te₄

Li¹,

Liu²,

Wang³

et al. 2021

J. Phys. D: Appl. Phys.

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The recently discovered antiferromagnetic topological insulator MnBi2Te4 hosts many exotic topological quantum phases such as the axion insulator and the Chern insulator. Here we report on systematic gate-voltage-dependent magneto-transport studies in six-septuple-layer MnBi2Te4. In the p-type carrier regime, we observe positive linear magnetoresistance (MR) when MnBi2Te4 is polarized in the ferromagnetic state by an out-of-plane magnetic field. Whereas in the n-type regime, distinct negative MR behaviors are observed. The behaviors of magnetoresistance in both regimes are highly robust against temperature up to the Néel temperature. Within the antiferromagnetic regime, the behavior of MR exhibits a transition from negative to positive under the control of gate voltage. The boundaries of the MR phase diagram can be explicitly marked by the gate-voltage-independent magnetic fields that characterize the processes of the spin-flop transition. The rich transport phenomena demonstrate the intricate interplay between topology, magnetism and dimensionality in MnBi2Te4.

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Section: Resultsmentioning

confidence: 99%

Gate-tunable magnetoresistance in six-septuple-layer MnBi₂Te₄

Li¹,

Liu²,

Wang³

et al. 2021

J. Phys. D: Appl. Phys.

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“…It should be noted that the AHE signal is electrically sensitive to the domain configuration at the vicinity of the intersection of the Hall bar. [29,30] Any significant changes in the domain structure in the vicinity of the Hall cross would give rise to the variation in the AHE output as observed on the IrMn (2 nm) device (Figure S5, Supporting Information), serving as the origin of the stochasticity. On the counterpart, the IrMn (8 nm) shows a quite reproducible domain configuration upon performing the random read/write characterization.…”

Section: Resultsmentioning

confidence: 99%

A Spin‐Orbit Torque Switch at Ferromagnet/Antiferromagnet Interface Toward Stochastic or Memristive Applications via Tailoring Antiferromagnetic Ordering

Wang,

Chen,

Chang

et al. 2023

Adv Elect Materials

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Antiferromagnet (AFM) has currently participated in the spin‐orbit torque (SOT) technology due to its great potential to be applied to the field‐free SOT switching and to promote the thermal stability of MRAM. However, the effect of varying AFM ordering on the SOT switching and the associated properties is still not comprehensively understood. This work reports how an AFM ordering modifies the strength of Dzyaloshinskii–Moriya‐interaction (DMI) in a heavy metal (Pt)/FM (Co)/AFM (IrMn) trilayer and its effects on SOT switching. Increasing the AFM ordering reflects the enhanced exchange bias through increasing IrMn thickness appears to significantly reduce the DMI strength of the trilayer. Controlling the IrMn thickness appears to serve as a unique switch to activate memristivity/stochasticity in the devices via tailoring AFM ordering on exchange bias: The strong AFM ordering via increasing IrMn thickness enables to increase the stability of multi‐levels for SOT switching, which promotes the memristivity for neuromorphic application. On the contrary, the weak AFM ordering via reducing IrMn thickness will lead to significant stochasticity for the physically unclonable functionality. This work demonstrates an intrinsic tuning over the AFM ordering will serve as a switch to turn the SOT device into a stochastic/memristive cell to bridge probabilistic and neuromorphic computing.

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“…The spikes can be attributed to the additional Hall signal associated with domain wall configuration between two parallel voltage channels in the Hall bar, which has been systematically studied in magnetic devices with perpendicular anisotropy. [37,38] Interestingly, the hysteresis component of R xx appears to be strongly dependent on the existence of IrMn, which was not previously observed in IrMn-free control devices. In MR measurements, changes in R xx can be attributed to changes in the in-plane magnetic component of either IrMn or CoFeB, due to the anisotropic magneto-resistance effect (AMR).…”

Section: Introductionmentioning

confidence: 80%

A Spin‐Orbit Torque Ratchet at Ferromagnet/Antiferromagnet Interface via Exchange Spring

Yu-Han

Yang

Cheng

et al. 2022

Adv Funct Materials

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The antiferromagnet (AFM) and ferromagnet (FM) interface is a unique branch of magnetics of broad scientific interest. AFMs play an important role in spin-orbit torque devices based on their ability to generate spin-polarized current and exchange bias when combined with FMs. In this study, an interesting spin-orbit torque (SOT) ratchet involving the exchange spring effect in an IrMn/CoFeB bilayer device with perpendicular anisotropy and exchange bias is developed. The combined use of electrical and spectroscopic analysis reveals that the exchange spring in IrMn/CoFeB bilayer yields unidirectional anisotropy, resulting in a collinear/orthogonal AFM/FM spin configuration at the interface upon switching CoFeB magnetization upward/downward. The ratcheting characteristics resulting from unidirectional anisotropy manifest in SOT switching. In this process, magnetization against the exchange spring features digital-like switching with a sharp transition, whereas the reverse function is characteristic of analog switching with a gradual transition tail. The dual digital-analog characteristics of the IrMn/CoFeB bilayer may be of benefit in neuromorphic and memory applications.

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Asymmetric magnetoresistance of nanowires with perpendicular anisotropy seen as a contribution from the contacts

Cited by 6 publications

References 16 publications

Gate-tunable magnetoresistance in six-septuple-layer MnBi₂Te₄

Gate-tunable magnetoresistance in six-septuple-layer MnBi₂Te₄

A Spin‐Orbit Torque Switch at Ferromagnet/Antiferromagnet Interface Toward Stochastic or Memristive Applications via Tailoring Antiferromagnetic Ordering

A Spin‐Orbit Torque Ratchet at Ferromagnet/Antiferromagnet Interface via Exchange Spring

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Asymmetric magnetoresistance of nanowires with perpendicular anisotropy seen as a contribution from the contacts

Cited by 6 publications

References 16 publications

Gate-tunable magnetoresistance in six-septuple-layer MnBi2Te4

Gate-tunable magnetoresistance in six-septuple-layer MnBi2Te4

A Spin‐Orbit Torque Switch at Ferromagnet/Antiferromagnet Interface Toward Stochastic or Memristive Applications via Tailoring Antiferromagnetic Ordering

A Spin‐Orbit Torque Ratchet at Ferromagnet/Antiferromagnet Interface via Exchange Spring

Contact Info

Product

Resources

About

Gate-tunable magnetoresistance in six-septuple-layer MnBi₂Te₄

Gate-tunable magnetoresistance in six-septuple-layer MnBi₂Te₄