2024
DOI: 10.1002/pssa.202300708
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Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications

Bazila Parvez,
Jyoti Sahu,
Subhajit Basak
et al.

Abstract: We report high‐power InGaN back‐barrier AlGaN/GaN high electron mobility transistors with the gate placed closer to the source with an Au‐filled groove in the SiC substrate near the drain end. An InGaN back‐barrier is known to reduce short‐channel effects at high drain‐to‐source (VDS) voltage. However, the improvement is realized at the cost of reduced two‐dimensional electron gas density (ns) and saturation drain‐to‐source (IDS,SAT) current. Here, we demonstrate that both ns and IDS,SAT are recovered when the… Show more

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