Asymmetric device based on bimetallic cobalt chromium oxynitride as a positive electrode material

Kumar, Umesh; Sreenivasulu, N.; Bhattacharya, S. S.; Thomas, Tiju

doi:10.1016/j.est.2022.105546

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2023

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“…The materials are widely employed in armored windows [5], electrodes for chemical current sources [6], temperature sensors [7], nonlinear optics elements [8], gate dielectric layers in microelectronics [9], and optical media for lasers and LEDs [10,11]. Specifically, aluminum oxynitride (AlON) exhibits a wide optical gap ranging from 5.2 to 5.9 eV, making it suitable for use as a phosphor matrix that can be doped with transition and rare earth metal ions.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and spectroscopic properties of aluminum oxynitride doped with 3d-metal ions: the case of γ-AlON:Co

Ishchenko,

Akhmadullina,

Leonidov

et al. 2023

Preprint

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The article presents a method to synthesize aluminum oxynitride (AlON) doped with cobalt ions at concentrations ranging from 0.01 at.% to 5 at.%. The phase and elemental composition of the samples and their optical properties have been studied upon variation of the cobalt content. Five emission bands in the pulsed cathodoluminescence spectra are attributed to intrinsic defects and impurities in AlON. The optical gap of AlON:Co estimated using the Tauc method are in the range of 5.72–5.84 eV and are significantly influenced by the oxygen content in the AlON host.

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