2020 4th International Conference on Electronics, Materials Engineering &Amp; Nano-Technology (IEMENTech) 2020
DOI: 10.1109/iementech51367.2020.9270056
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Asymmetric AlGaAs/GaAs/InGaAs Based Quantum Well Long Wavelength Infrared Photodetector

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“…In addition, comparing with other traditional narrow-bandgap semiconductors and quantum well based IR photodetectors, the PdSe 2 -based PTE detector can work at room temperature without the cooling system (Table S2, Supporting Information). The performance of the PTE PdSe 2 detector could be further improved through metal electrode optimization (such as Ni), material doping, substrate optimization, and so on. , …”
Section: Resultsmentioning
confidence: 99%
“…In addition, comparing with other traditional narrow-bandgap semiconductors and quantum well based IR photodetectors, the PdSe 2 -based PTE detector can work at room temperature without the cooling system (Table S2, Supporting Information). The performance of the PTE PdSe 2 detector could be further improved through metal electrode optimization (such as Ni), material doping, substrate optimization, and so on. , …”
Section: Resultsmentioning
confidence: 99%