Association of the 6-eV Optical Band in Sapphire with Oxygen Vacancies

Luminescence Excitation and Influence of Radiation on the Stimulated Processes in Corundum Crystals

“…The crystals were irradiated by 50 MeV electrons and 2 MeV neutrons. The irradiations were performed at GANIL with Pb ions of 3.5 MeV/amu energy at equilibrium charge state, corresponding to an electronic stopping power of 420 keV/nm [4].…”

Damage accumulation in ceramics during ion implantation

“…Ion implantation and ion beam mixing are being increasingly used to alter the near-surface of materials other than semiconductors. Recently there has been renewed interest in the study of the structure and properties of ceramics .0 eV [2,3]. These absorption bands are characteristic of the F + and F centers, that is, oxygen vacancies containing one and two trapped electrons, respectively.…”

Ion Beam Mixing of Ceramic Alloys - Preparation Andmechanical Properties

“…Currently, the degree of lattice disorder in AI2O3 per unit fluence appears much loss than in previous studies [13][14][15][16][17][18][19][20][21]. For example, the increase in the aligned upectra minima for the 40 koV Kr bombardment [201 occurs at about two order:; of magnitude lower <loso (lo'Vcnr) than our 1 MoV Pe irradiations (10 l '/cm*).…”

“…Other investigators have studied defect structure produced by the implantation of H, He, Ar, Kr, and Xe as well .is self ion implantation of aluminum and oxygen [15][16][17][18][19][20]. Although no data on mechanical properties have been repeated, a group at Sandia National Laboratory has calculatedRurface stress produced in AI2O3 from a measurement of the -deflection of a cantilever beam specimen during implantation [21].…”