2013
DOI: 10.1016/j.apsusc.2013.01.200
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Assistance of partially reduced MoO3 interlayer to hole-injection at iron phthalocyanine/ITO interface evidenced by photoemission study

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Cited by 12 publications
(13 citation statements)
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“…More detailed descriptions of the beamline and endstation can be found elsewhere. 31,32 The TiO 2 (110) wafer (supplied by KMT Ltd., China) was cleaned using repeated cycles of Ar + sputtering and annealing at 900 K in the UHV system, yielding a clean and lightly reduced TiO 2 (110)-(1 × 1) surface with sharp LEED pattern. TPA (99%, Sigma-Aldrich Chemie GmbH, Germany) was thoroughly degassed for several hours before sublimated onto the TiO 2 (110) substrate from a resistively heated Knudsen cell.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…More detailed descriptions of the beamline and endstation can be found elsewhere. 31,32 The TiO 2 (110) wafer (supplied by KMT Ltd., China) was cleaned using repeated cycles of Ar + sputtering and annealing at 900 K in the UHV system, yielding a clean and lightly reduced TiO 2 (110)-(1 × 1) surface with sharp LEED pattern. TPA (99%, Sigma-Aldrich Chemie GmbH, Germany) was thoroughly degassed for several hours before sublimated onto the TiO 2 (110) substrate from a resistively heated Knudsen cell.…”
Section: Methodsmentioning
confidence: 99%
“…The analysis chamber is equipped with a VG angle-resolved electron energy analyzer (ARUPS-10), a Mg/Al twin-anode X-ray source, and a VG retractable four-grid LEED system. More detailed descriptions of the beamline and endstation can be found elsewhere. , …”
Section: Methodsmentioning
confidence: 99%
“…[25][26][27][28][29][30][31][32][33][34][35][36][37][38] As a wide band gap material, the band gap of MoO 3 has been reported to be 2.9-3.0 eV. 25,39 Oxygen deficiency in stoichiometric MoO 3 leads to occupied defect states close to the conduction band minimum, making it an n-type semiconductor.…”
Section: Introductionmentioning
confidence: 98%
“…39 Thanks to its very high work function (6.8 eV), MoO 3 was widely used to modify the metal/organic interfaces, and a mechanism of hole injection via electron extraction has been proposed. [29][30][31][32][33][34][35][36][37][38][39] Furthermore, in contrast to some chemically active metals, MoO 3 is not expected to react with oxide semiconductors, thus it is an ideal choice for investigating interfacial electronic structures.…”
Section: Introductionmentioning
confidence: 99%
“…The peak responsible for carbonnitrogen stretching and bending occurs at 1332 ± 4 cm −1 . The peaks located at 1164 ± 2, 1117 ± 2 and 753 ± 2 cm −1 are due to the interaction of carbon atoms with the peripheral-ring hydrogen atoms [8][9][10]. As mentioned above, spin coating and annealing were carried out to produce the thin films.…”
Section: Phthalocyanines and Some Current Applicationsmentioning
confidence: 99%