Assessment of the high field behaviour of polyimide films: Experimental methods and impact of electrode material

Carrasco, Flora; Velazquez-Salazar, Amanda; Berquez, Laurent; Diaham, Sombel; Griseri, V.; Lebey, Thierry; Locatelli, Marie-Laure; Marty-Dessus, Didier; Muto, Hirotaka; Tajiri, K.; Tsurimoto, Takao; Teyssedre, G.

doi:10.23919/iseim.2017.8088704

Cited by 2 publications

(3 citation statements)

References 7 publications

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“…The space charge investigation using the same PI film under extremely higher DC stress, close to breakdown voltages, from 25 to 125 kV/mm has already been reported and discussed with DC conductivity trend in [12] [13]. In the present paper, experimental studies of the space charge dynamics in thin PI films in more moderate electric fields under 25 kV/mm are presented using the LIMM.…”

Section: Introductionmentioning

confidence: 60%

“…The cause of the large negative charge accumulation is presumed to be electron injection from the Si substrate under positive polarity, and likewise negative charge injection from the surface gold electrode under negative polarity. This second hypothesis was confirmed in [12] where electron injection from the top electrode was clearly limited when the top electrode was aluminium and where native alumina (formed between the top electrode and the PI-layer) acts as an electronic barrier. Under a negative polarity, the observed positive charge in the vicinity of the Si is assumed to be injected from Si substrate.…”

Section: Discussionmentioning

confidence: 78%

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Electric field enhancements due to space charge in thin polyimide film

Tajiri

Teyssèdre

Muto

et al. 2019

2019 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)

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Polyimide (PI) is widely used in film form as a passivation material for power semiconductor devices of Si, SiC, GaN, etc. The magnitude of the electric field at the edge termination area of these semiconductor devices is becoming higher and higher due to the increase of operational voltage and /or demand for shrinking the edge termination area to increase device active area. Hence it is concerned that space charge accumulation in the encapsulation and passivation material affects the insulation performance of those devices. In this report, space charge distribution and electric field enhancement associated with the charge accumulation have been investigated for thin PI film with thicknesses of about 20 μm, using Laser Intensity Modulation Method (LIMM). It is shown that the enhancement factor of the internal electric field (the maximum internal electric field divided by the applied field) in PI film is negligibly small (less than 1.1) for applied fields less than 10 kV/mm. However, it can reach much higher like 1.4 at higher applied field like 25 kV/mm. This result implies that electric field at edge termination area should be carefully designed under such an operational electric field as is the case of SiC devices.

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Section: Introductionmentioning

confidence: 60%

Section: Discussionmentioning

confidence: 78%

Electric field enhancements due to space charge in thin polyimide film

Tajiri

Teyssèdre

Muto

et al. 2019

2019 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)

Self Cite

View full text Add to dashboard Cite

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“…In [10], the effect of humidity in air and the difference due to electrode material (Al and Au) on space charge formation with time evolution are discussed. Recently, the Laser Intensity Modulation Method (LIMM) [13] has been performed to investigate space charge characteristics in thin PI films with few micrometers in thickness under the DC field up to 125 kV/mm, close to breakdown voltage [14][15][16][17]. In [17], the space charge characteristics were reported under DC voltage of from low field of 2.5 to 125 kV/mm with the correlation with DC conductivity trends.…”

Section: Introductionmentioning

confidence: 99%

Behavior of Space Charge in Polyimide and the Influence on Power Semiconductor Device Reliability

Tajiri¹,

Muto²,

Marty-Dessus³

et al. 2021

Polyimide for Electronic and Electrical Engineering Applications

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Polyimide is widely used in film form as a passivation material for power semiconductor devices such as Si, SiC, and GaN. The magnitude of the electric field at the edge termination area of these semiconductor devices is becoming higher due to the increase of operational voltage and/or demand for shrinking the edge termination area to increase device active area. Hence, it is concerned that the accumulation of space charge in the encapsulation and passivation material may affect the insulation performance of these devices, for example, the degradation of withstand voltage due to distortion of the internal electric field caused by space charge accumulation. To design space charge resistance of semiconductor devices, it is important to understand the space charge behavior in polyimide films with a thickness of several to several tens of micrometers. This chapter addresses practical implementation, specifications, and issues on space charge in polyimide insulation on power semiconductor devices focusing on the space charge measurements in thin polyimide films using the latest developed LIMM method and DC conductivity measurements.

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Assessment of the high field behaviour of polyimide films: Experimental methods and impact of electrode material

Cited by 2 publications

References 7 publications

Electric field enhancements due to space charge in thin polyimide film

Electric field enhancements due to space charge in thin polyimide film

Behavior of Space Charge in Polyimide and the Influence on Power Semiconductor Device Reliability

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