Assessment of Se based phase change alloy as a candidate for non-volatile electronic memory applications

Wang, K.; Steimer, C.; Detemple, Ralf; Wamwangi, Daniel; Wuttig, Matthias

doi:10.1007/s00339-005-3358-2

Cited by 24 publications

(23 citation statements)

References 17 publications

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“…Temperature dependent sheet resistance measurements were performed to investigate the kinetics of the structural change. As the film was annealed, the microstructure transformation could result into a change in electrical resistivity [31]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Magnetic, thermal, electrical properties and crystallization kinetics of Co60Fe20B20 alloy films

Wang

Huang

et al. 2016

Sci. China Mater.

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Magnetic, thermal and electrical properties of sputtered Co60Fe20B20 alloy films are investigated. An excellent linear relationship between the saturation magnetization per unit area and thickness is obtained in the as-deposited film with thickness ranging from 10 to 100 nm. For the as-deposited films a high effective saturation magnetization of 793.7 ± 42.9 emu cm −3 is derived from the fitting. An in-plane uniaxial magnetic anisotropy of~10 4 erg cm −3 in magnitude is revealed by angular dependent magnetic measurements. A fourfold cubic magnetic anisotropy is found to develop with annealing, in line with the improvement of the crystalline structure in the film confirmed by X-ray diffraction measurements. Thermomagnetic measurements reveal a considerable variation of the saturation magnetization with temperature arising from the competition of the crystallization and the temperature dependent ferromagnetic behavior of the alloy film. Pronounced changes in electrical resistivity with temperature were observed in the alloy film, in accompany with the structural change. The activation barrier for crystallization was determined to be 1.43 eV from the electrical measurements with variable heating rates, showing a good thermal stability of the alloy film.

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Section: Resultsmentioning

confidence: 99%

Magnetic, thermal, electrical properties and crystallization kinetics of Co60Fe20B20 alloy films

Wang

Huang

et al. 2016

Sci. China Mater.

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“…1-3 AgSbSe 2 -based alloys are attractive as a switching medium for optical memories due to a reversible amorphous to crystalline-state transition. [4][5][6][7][8] Cubic AgSbTe 2 is recognized as a very promising p-type thermoelectric material for thermal energy conversion at the 500-800 K temperature range.…”

Section: Introductionmentioning

confidence: 99%

Structural and thermoelectric properties ofAgSbTe2-AgSbSe2pseudobinary system

Wojciechowski

Schmidt

2009

Phys. Rev. B

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Structural properties of the AgSbTe 2 -AgSbSe 2 pseudobinary system were examined using thermal analysis, scanning electron microscopy, and x-ray powder diffractometry. It was found that partial substitution of Te by Se atoms leads to stabilization of the cubic crystal structure of alloys. The electronic-transport properties of materials were measured in order to investigate carrier conduction, band-gap features, and thermoelectric properties. The undoped homogeneous solid solution exhibits extremely low thermal conductivity of 0.5 W m −1 K −1 , a very large positive Seebeck coefficient of about 400-600 V K −1 at room temperature, low carrier densities of 10 16 -10 18 cm −3 , and thermally activated conduction. The influence of alloying on thermal-conductivity mechanisms and electron properties was discussed. The highest experimental dimensionless figure of merit ZT of the undoped AgSbSe 0.25 Te 1.75 sample is about 0.65 at a temperature of 520 K. The influence of doping on enhancement of thermoelectric properties of these materials was analyzed and optimal values of transport parameters were estimated.

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“…Alloys of both compounds either in single-crystal form or in thin-film form have received considerable interest owing to their optical and electronic properties. They are attractive phase-change (PC) materials used as a switching medium in rewritable optical memories [4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%