Assessment of Germanane Field-Effect Transistors for CMOS Technology

Zhao, Yiju; AlMutairi, AbdulAziz; Yoon, Youngki

doi:10.1109/led.2017.2763120

Cited by 14 publications

(2 citation statements)

References 17 publications

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“…In order to find the switching delay of a transistor when it is driving another load transistor, a constant capacitor C L (effective gate capacitance of the load transistor) may be considered as the load during the transient analysis [37,51]. The delay may also be determined by extracting the total switching charge (Q OFF→ON ) flowing through the load transistor during its switching from the OFF-state to the ON-state [52][53][54]. In this study, we use the later technique where Q OFF→ON is extracted from TCAD simulation by integrating the total gate capacitance from 0 V to V DD .…”

Section: Resultsmentioning

confidence: 99%

On the performance of hafnium-oxide-based negative capacitance FinFETs, with and without a spacer

Sil¹,

Nawaz²,

Mallik³

2022

Semicond. Sci. Technol.

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This paper reports a thorough investigation of the impacts of a spacer dielectric on the performance of HfO2-feroelectric-based NC-FinFETs for 10nm technology (gate length 22nm) as per IRDS with in comparison with similarly-sized conventional FinFETs by means of an industry standard technology computer aided design (TCAD) tool. It is found that, although a high-k spacer results in improved SS and ION, it increases delay due to enhanced gate capacitance for both types of devices. In spite of having higher gate capacitance for a given spacer, the delay is lower for the NC devices than the conventional devices with identical IOFF, which is due to higher ION in such devices. Comparing with the Baseline FinFET; ION, SS, threshold voltage, delay and power dissipation of NC-FinFET have been found to improve by 69%, 7%, 5%, 14% and 9%, respectively, when Si3N4 spacer is used. Implications of spacer on VDD scalability, delay and power dissipation of NC-FinFETs have also been investigated in one-to-one comparison with similarly-sized conventional FinFETs. If identical delay is considered in both the devices, higher active power dissipation due to enhanced gate capacitance is a concern for HfO2-feroelectric-based NC-FinFETs.

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Section: Resultsmentioning

confidence: 99%

On the performance of hafnium-oxide-based negative capacitance FinFETs, with and without a spacer

Sil¹,

Nawaz²,

Mallik³

2022

Semicond. Sci. Technol.

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“…Interestingly both SiH and GeH exhibit buckled honeycomb like structures under ambient condition and find extensive applications as efficient photocatalysts for water splitting [28][29][30][31][32]. Moreover, these materials show piezoelectric behavior and successfully used as 2D transistors [33][34][35][36]. While SiH shows an indirect band gap (E g ) of ∼2.…”

Section: Introductionmentioning

confidence: 99%

Strain induced modulations in the thermoelectric properties of 2D SiH and GeH monolayers: insights from first-principle calculations

Banik,

Ghosh,

Chowdhury

2024

J. Phys.: Condens. Matter

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The present paper is primarily focused to understand the strain driven alterations in thermoelectric properties of two-dimensional SiH and GeH monolayers from first-principle calculations. Electronic band structures and the associated thermoelectric properties of the compounds under ambient and external strains have been critically unveiled in terms of Seebeck coefficients, electrical conductivities, power factors and electronic thermal conductivities. The phonon dispersion relations have also been investigated to estimate the lattice thermal conductivities of the systems. The thermoelectric figure of merits of SiH and GeH monolayers under ambient and external strains have been explored from the collective effects of their Seebeck coefficients, electrical conductivities, electronic and lattice thermal conductivities. The present study will be helpful in exploring the strain induced thermoelectric responses of SiH and GeH compounds which in turn may bear potential applications in clean and global energy conservation.

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Tuning the structural, electronic and magnetic properties of germanane/silicane and its nanoribbons through hydrogen defect clusters

Wu,

Liu,

Sun

et al. 2024

Physica B: Condensed Matter

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Assessment of Germanane Field-Effect Transistors for CMOS Technology

Cited by 14 publications

References 17 publications

On the performance of hafnium-oxide-based negative capacitance FinFETs, with and without a spacer

On the performance of hafnium-oxide-based negative capacitance FinFETs, with and without a spacer

Strain induced modulations in the thermoelectric properties of 2D SiH and GeH monolayers: insights from first-principle calculations

Tuning the structural, electronic and magnetic properties of germanane/silicane and its nanoribbons through hydrogen defect clusters

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