Assessment and application of focus drilling for DRAM contact hole fabrication

Abstract

By assessment of options for the fabrication of small contact holes in DRAM devices the method of focus drilling was identified and investigated to overcome the depth of focus limitations. By use of ArF-dry lithography a practical shrink of the target CD by 15nm can be achieved both with a focus offset double exposure (FODEX) and with a tilted stage approach. This was optimized in simulation and demonstrated by CD measurement on wafer, as well as by electrical measurement on integrated lots. Application of dual lambda focus drilling is limited by the chromatic magnification error of the lens. The increase of hole-to-hole CD variations due to a lower dose latitude and to increased MEEF was characterized. As improvement option the use of a high transmission attPSM was identified.

The Focus Margin Gain and Limitation Realized by Focus Drilling in 28 nm Hole-Like Design Rules

“…When semiconductor technology node achieves to 28 nm, some function of scanner comes out contribution on process window increase. Focus drilling is the scanner implementation to increase the depth of focus (DoF) for contact-hole or via fabrication processes [1][2][3][4][5][6][7]. The basic principle is to smear out the maximum image contrast at best focus (BF) over a specific defocus range.…”