Abstract:The successful implementation of extreme ultraviolet lithography (EUVL) for patterning in the sub-32 nm regime will require significant improvements in image placement (IP) accuracy over the next few years. The IP error budget for the mask system is extremely stringent; consequently, the reduction or elimination of all sources of error is essential. One potential source of IP error is the effect of the residual nonflatness of the patterned surface of the mask during exposure scanning. The focus of this article… Show more
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