Assessing the growth window of stannous oxide by ion beam sputter deposition (IBSD)

Becker, Martin; Michel, Fabian; Polity, A.; Klar, Peter J.

doi:10.1016/j.jcrysgro.2018.05.009

Cited by 3 publications

(1 citation statement)

References 51 publications

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“…Điều này cũng tương tự với vật liệu SnO, obitan 5s của Sn 2+ lai hóa với obitan 2p 6 của O. Vì các obitan s có khả năng mở rộng hơn so với các obitan d, sự lai hóa obitan 2p của O với các obitan s có thể dẫn đến sự phân bố vùng hóa trị lớn hơn và do đó khối lượng hiệu dụng của các lỗ trống thấp và dễ dàng pha tạp các tạp chất cho (acceptor) dẫn đến tăng độ linh động và nồng độ lỗ trống 10,11 , cho thấy SnO là một ứng cử viên sáng giá cho vật liệu ôxít loại p đã và đang thu hút được sự quan tâm nghiên cứu trong thời gian gần đây. Màng mỏng SnO là chất bán dẫn loại p tự nhiên, lỗ trống hình thành do nút khuyết thiếc (V Sn ) và nguyên tử oxy ngoài mạng (O i ) 12,13 , có độ rộng vùng cấm quang ứng với chuyển mức xiên là 0.7 eV hoặc chuyển mức thẳng nằm trong khoảng 2,5 -3,4 eV [14][15][16] . Nhờ các tính chất điện quang thú vị nên màng mỏng SnO đã được ứng dụng trong nhiều lĩnh vực chế tạo linh kiện điện tử như: transitor hiệu ứng trường (TFT) 17 , photodiode 18 , pin mặt trời 18 .…”

Section: Mở đầUunclassified

Effect of the sputtering time on the characteristics of p-SnOx:Na films prepared by the reactive direct current magnetron sputtering method

Hoai Phuong,

Ngoc Yên Nhi,

Trung Hieu

et al. 2022

Sci. Tech. Dev. J. - Nat. Sci.

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The fabrication of n- and p-type transparent oxide semiconductor films is critical in the production of transparent electrical and optoelectronic components on the p‒n junction, particularly the p-type, because the maximum of the valence band formed by the 2p orbitals of oxygen and their local (narrow) dispersions have formed deep levels, making difficult in doping of acceptor impurities in p-type oxide semiconductors. Among the p-type transparent oxide semiconductor films that have been studied so far, the p-type SnOx film which had outstanding electrical conductivity and optical transparency, is a good candidate for constructing a p‒n junction with another n-type semiconductor in homogeneous or heterogeneous form. In this paper, a Na-doped SnOx film was produced from Sn + 3 at% Na alloy target using the reactive sputtering process at a temperature of 200 0C. XRD, XPS, AFM, Hall, and UV-Visible techniques were used to evaluate the effect of sputtering duration on the structural and electro-optical properties of SnOx:Na films. The results of the survey showed that when the sputtering time increased from 7 minutes to 14 minutes, 21 minutes, and 35 minutes, the film thickness increased, resulting in an increase in the crystal size, a decrease in the grain boundary, and an increase in carrier mobility, all of which lead to a reduction in the film's resistivity. However, as the film thickness increased, the transmittance dropped and the optical bandgap shrinked.

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Section: Mở đầUunclassified

Effect of the sputtering time on the characteristics of p-SnOx:Na films prepared by the reactive direct current magnetron sputtering method

Hoai Phuong,

Ngoc Yên Nhi,

Trung Hieu

et al. 2022

Sci. Tech. Dev. J. - Nat. Sci.

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Effect of sodium doping on characteristics of p-SnOx films prepared by reactive direct current magnetron sputtering

Pham

Ngo

Bui

et al. 2022

Ceramics International

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Controlling the p-type conductivity of SnO by doping with nitrogen and hydrogen

Becker

Hamann

Voget-Grote

et al. 2019

Journal of Applied Physics

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Two series of SnO thin films, one doped with N and one doped with H, were deposited on c-plane sapphire by reactive ion beam sputter deposition starting from growth parameters optimized for stoichiometric SnO. The amounts of dopants incorporated into the SnO:H and SnO:N samples were quantified by secondary ion mass spectroscopy. The influence on the structural and electrical properties of SnO thin films was studied as a function of dopant concentration. In the case of N doping, all N incorporated, probably as NO, are active as the acceptor and exhibit long-term stability. We assign an acceptor activation energy of 100 to 150 meV to NO. However, we observe a change in the film morphology at a critical N concentration of about 7⋅1017cm−3, which deteriorates the structural properties of the films. In the case of SnO:H, the situation is different. We observe an outdiffusion of H after growth, i.e., the samples are not stable in the long term. Nevertheless, all H incorporated up to a H-content of 1019cm−3 seem to be electrically active and exhibit an activation energy between 150 and 250 meV, likely corresponding to Hi. Furthermore, at H contents above 1019cm−3, we observe molecular H2 inside the SnO:H thin films. We conclude that N doping of SnO is better suited for tuning the p-type conductivity of SnO. However, it will be essential to overcome the morphology change observed at the critical N concentration to fully explore the tunability of the p-type conductivity in device applications.

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Assessing the growth window of stannous oxide by ion beam sputter deposition (IBSD)

Cited by 3 publications

References 51 publications

Effect of the sputtering time on the characteristics of p-SnOx:Na films prepared by the reactive direct current magnetron sputtering method

Effect of the sputtering time on the characteristics of p-SnOx:Na films prepared by the reactive direct current magnetron sputtering method

Effect of sodium doping on characteristics of p-SnOx films prepared by reactive direct current magnetron sputtering

Controlling the p-type conductivity of SnO by doping with nitrogen and hydrogen

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