Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems

Raffo, Antonio; Avolio, Gustavo; Vadalà, Valeria; Bosi, Gianni; Vannini, G.; Schreurs, Dominique

doi:10.1109/lmwc.2018.2867732

Cited by 17 publications

(10 citation statements)

References 12 publications

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“…Fig. 3 shows the drain current, without (T pk−pk → ∞) and with pre-pulse (case T pk−pk = 0), and the associated current reduction ∆I ds when a pre-pulse is used, which can be associated to the trap-induced current collapse in the GaN HEMTs [2], [5], [6]. At low input amplitudes, current reduction is present only on the carrier PA whereas at higher amplitudes the peaking PA shows a similar effect.…”

Section: Hpa Measurement Resultsmentioning

confidence: 99%

“…A pre-pulse of 1-µs duration sets the HPA trap-stateX to a pre-selected level. For example, at the peak output power P out,max , both PA load-lines reach the maximum drain-source voltage, hence the corresponding HPA trap-state is set toX max = [X c,max , X p,max ] [5], [6], [7]. On the other hand, when only the quiescent bias of the transistor is present, the HPA trapping-state is at the minimum, X min = [X c,min , X p,min ].…”

Section: Hpa Characterizationmentioning

confidence: 99%

“…Experimental evidence has shown that the trapping state is mainly set by a combination of the intrinsic gate and drain peak voltages in the transistor which activates fast charge capture in the trap states, while the release is typically slower, with time constants in the order of tenth of µs to ms [4], [5]. This device-level degradation translates into modification of the small-and large-signal characteristics of a transistor [6], [7], [8] and affects PA architectures such as the Doherty.…”

Section: Introductionmentioning

confidence: 99%

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Linearization of a 500-W L-band GaN Doherty Power Amplifier by Dual-Pulse Trap Characterization

Cappello¹,

Florian

Santarelli

et al. 2019

2019 IEEE MTT-S International Microwave Symposium (IMS)

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This paper describes the linearization of a base-station L-band 500-W GaN Doherty high power amplifier (HPA) driven by OFDM signals. Pre-pulsing characterization is used to extract the gain dispersion of the carrier and peaking PAs due to trap-induced degradation of GaN-on-SiC transistors. Peak drain voltages reached by PA load-lines mainly set the trap states of the carrier and peaking PAs, while the recovery is longer with a dominant time constant of 100 µs for this specific GaN technology. When the peak occurrences are below this dominant time constant of 100 µs, such as for symbol periods of 16.7 to 66.7 µs (i.e., LTE/5G OFDM), the HPA trap-state remains approximately constant in the time interval between voltage peaks, allowing low-complexity linearization of the HPA. With a 10-MHz OFDM signal with peak-to-peak intervals shorter than 100 µs, a memory-less digital pre-distortion (DPD) is shown to improve ACLR by 4 dB and NRMSE by 1.6 percentage points, as compared to peak-to-peak intervals longer than 100 µs when significant trap recovery takes place.

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Section: Hpa Measurement Resultsmentioning

confidence: 99%

Section: Hpa Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Linearization of a 500-W L-band GaN Doherty Power Amplifier by Dual-Pulse Trap Characterization

Cappello¹,

Florian

Santarelli

et al. 2019

2019 IEEE MTT-S International Microwave Symposium (IMS)

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“…For these reasons, the GaN-based HEMT has become mainstream in many power amplifier designs, 4,5 particularly where required high power densities is not available from competing metal-oxide-semiconductor (MOS) technology (eg, LDMOS). 6 Although GaN devices exhibit superior performance, their electrical characteristics are complex, 7,8 and therefore extracting optimal performance from the device is not straightforward. Furthermore, while there has been significant recent research interest in device models for GaN-based devices, it remains true that the current modeling state-of-the-art for GaN devices has not reached the same level as exits for other device technologies.…”

Section: Introductionmentioning

confidence: 99%

Modified small‐signal behavioral model for GaN HEMTs based on support vector regression

Geng

Cai

King

et al. 2021

Int J RF Microw Comput Aided Eng

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A novel, modified small signal behavioral modeling methodology for gallium nitride (GaN) high electron-mobility transistors (HEMTs), based on the support vector regression (SVR) technique, is presented in this paper. Compared with the classic equivalent small-signal circuit model, the proposed model adds an error correction technique, which is developed using SVR techniques. The proposed model maintains accuracy across a broad frequency range, from 1 GHz to 10 GHz. The verification is performed through comparisons with measured multibias S-parameter data performed on an 8 Â 125 μm GaN HEMT device with a 0.25 μm gate feature size. The modified model shows a significant improvement in S-parameter prediction accuracy when compared with the classic equivalent circuit modeling approach.

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“…Saeed, M., see Hamed, A., LMWC April 2018 347-349 Safavi-Naeini, S., see Ranjkesh, N., LMWC March 2018 185-187 Saito, T., see Mizojiri, S., LMWC Sept. 2018 834-836 Sakakibara, K., see Ishikawa, Y., LMWC May 2018 380-382 Saleem, A., see Yin, X., 1146-1148 Samuel Chieh, J., A Substrate-Less Microwave Power-Combining Module Utilizing Ridge Gap Waveguide; LMWC Nov. 2018 972-974 Sanchez, J.R., Bachiller, C., Julia, M., Nova, V., Esteban, H., and Boria, V.E., Microwave Filter Based on Substrate Integrated Waveguide With Alternating Dielectric Line Sections; LMWC Nov. 2018 990-992 Sandeep, S., see Zhou, W., 1152-1154 Sanders, A., see Jargon, J.A., LMWC Oct. 2018 951-953 Sanghera, H., see Viegas, C., LMWC June 2018 518-520 Santarelli, A., see Gibiino, G.P., LMWC Aug. 2018 672-674 Sayed, A., see Chang, Y., 1014-1016 Schneider, M., see Meyer, A., LMWC July 2018 555-557 Schreurs, D., see Raffo, A., LMWC Nov. 20181035-1037 Schreurs, D., see Bao, X., LMWC Aug. 2018 732-734 Schreurs, D., see Bao, X., LMWC April 2018 356-358 Schreurs, D.M.M., see Crupi, G., 326-328 Schweizer, B., see Durr, A., LMWC Dec. 20181143-1145 Scott, J., see Ebrahimi, A., LMWC May 2018 419-421 Scott, J., see Ebrahimi, A., 1149-1151 Sebak, A., see Ali, M.M.M., LMWC July 2018 561-563 Sebak, A., see Ali, M.M.M., LMWC July 2018549-551 Sebak, A., see Ashraf, N., LMWC Oct. 2018 Sebak, A.R., see Mohamed, I., LMWC Nov. 2018 966-968 Selvam, Y.P., see Kingsly, S., LMWC Sept. 2018 786-788 Sen, S., see Maity, S., LMWC March 2018 266-268 Serrano, A.L.C., see Jost, M., LMWC Aug. 2018 681-683 Shah, U., Liljeholm, J., Campion, J., Ebefors, T., and Oberhammer, J., Low-Loss, High-Linearity RF Interposers Enabled by Through Glass Vias; LMWC Nov. 2018 960-962 Shahabadi, M., see Horestani, A.K., LMWC Feb. 2018 132-134 Sha...…”

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confidence: 99%

2018 IndexIEEE Microwave and Wireless Components LettersVol. 28

2018

IEEE Microw. Wireless Compon. Lett.

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This index covers all technical items-papers, correspondence, reviews, etc.-that appeared in this periodical during 2018, and items from previous years that were commented upon or corrected in 2018. Departments and other items may also be covered if they have been judged to have archival value. The Author Index contains the primary entry for each item, listed under the first author's name. The primary entry includes the coauthors' names, the title of the paper or other item, and its location, specified by the publication abbreviation, year, month, and inclusive pagination. The Subject Index contains entries describing the item under all appropriate subject headings, plus the first author's name, the publication abbreviation, month, and year, and inclusive pages. Note that the item title is found only under the primary entry in the Author Index.

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Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems

Cited by 17 publications

References 12 publications

Linearization of a 500-W L-band GaN Doherty Power Amplifier by Dual-Pulse Trap Characterization

Linearization of a 500-W L-band GaN Doherty Power Amplifier by Dual-Pulse Trap Characterization

Modified small‐signal behavioral model for GaN HEMTs based on support vector regression

2018 IndexIEEE Microwave and Wireless Components LettersVol. 28

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