Effective,
solution-processable designs of interfacial electron-transporting
layers (ETLs) or hole-blocking layers are promising tools in modern
electronic devices, e.g., to improve the performance, cost, and stability
of perovskite-based solar cells. Herein, we introduce a facile synthetic
route of thiazole-modified carbon nitride with 1.5 nm thick nanosheets
which can be processed to a homogeneous, metal-free ETL for inverted
perovskite solar cells. We show that thiazole-modified carbon nitride
enables electronic interface enhancement via suppression of charge
recombination, achieving 1.09 V in V
oc and a rise to 20.17 mA/cm2 in J
sc. Hence, this report presents the successful implementation
of a carbon-nitride-based structure to boost charge extraction from
the perovskite absorber toward the electron transport layer in p-i-n
devices.