Aspects of Corrosion from the ECS Publications

Isaacs, H.S.

doi:10.1149/1.1520544

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…During past decade two different bonding processes emerged as main competitors for 3D ICs manufacturing: metal thermo-compression bonding and Transient Liquid Phase (TLP) bonding (5) using Cu-Sn intermetalic compounds as bonding layers. Since Chemical Mechanical Polishing (CMP) yields metal surface roughness in the nm-and yet sub-nm (6,7) range and diffusion barrier layers were developed to prevent unwanted diffusion (especially of faster-diffusing impurities such as Au and Cu) into Si (8), the most frequently and wellestablished material combinations are Cu-Cu, Au-Au and Al-Al -for thermocompression bonding, and Cu-Sn -for TLP bonding (9,10,11,12,13).…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Cu-Cu Wafer Bonding

Rebhan¹,

Hesser

Duchoslav

et al. 2013

ECS Trans.

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Metal thermo-compression bonding is a process suitable for 3D interconnects applications at wafer level. The process requires typically bonding temperatures of ~400°C and high contact pressure applied during bonding. Temperature reduction below such values is required in order to solve some issues regarding wafer-to-wafer misalignment after bonding and to minimize thermo-mechanical stresses. Low-temperature (LT) Cu-Cu wafer bonding was successfully demonstrated at 175°C. The bond quality, bond strength, metal interface layers microstructure and chemical composition of Cu-Cu wafer pairs bonded under different process conditions were investigated. Experimental results on various Cu native oxide methods evaluation as well as results obtained for various bonding and annealing temperatures are presented.

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Section: Introductionmentioning

confidence: 99%

Low-Temperature Cu-Cu Wafer Bonding

Rebhan¹,

Hesser

Duchoslav

et al. 2013

ECS Trans.

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“…The electrochemical analysis of aqueous solutions is usually provided by a potentiostat. The term “potentiostat” was first used in 1942 by Hickling, who designed the first electronic models of the potentiostat and demonstrated its application in the study of iodide (Isaacs, 2002). Those early instruments were restricted to one polarity, the current ranges were limited, the amplification was rather low (therefore the resulting potential error was high), and the stable operation was a permanent problem (Strehlitz et al , 2008).…”

Section: Introductionmentioning

confidence: 99%

New CMOS potentiostat as ASIC for several electrochemical microsensors construction

Fujcik

Prokop

Prášek

et al. 2010

Microelectronics International

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PurposeThe purpose of this paper is to design and create a potentiostat that can be integrated and encapsulated within a microelectrode as a low‐cost electrochemical sensor. Recently, microsystems on sensors or lab on a chip using electrochemical detection of substances matters are pushing forward into the area of analysis. For providing electrochemical analysis, the microsystem has to be equipped with an integrated potentiostat.Design/methodology/approachThe integrated potentiostat with four current ranges (from 1 μA to 1 mA) was designed in the CADENCE software environment using the AMIS CMOS 0.7 μm technology and fabricated under the Europractice program. Memory cells of 48 bytes are implemented with the potentiostat using VERILOG.FindingsThe characteristics of integrated potentiostat are strictly linear; the measured results confirm the simulated values. The potentiostat measurements error is about 1.5 percent and very low offsets are reached by the offset‐zeroing circuitry.Research limitations/implicationsThe detection limit of the current at the lowest range with respect to S/N ratio is about 10 nA.Practical implicationsThe integrated potentiostat is embedded on a screen‐printed sensor and its characteristics are successfully verified. Lower range of 100 nA can be implemented on a new microchip as well as rail‐to‐rail output circuitry would increase the voltage dynamic range.Originality/valueThe integrated potentiostat with very good parameters is designed for a wide spectrum of electrochemical applications such as lab on a chip, embedded electrochemical systems, etc. The integrated system enables storing of information about the system measured, for instance, calibration and fabrication data of the electrochemical sensor.

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