As_4S_4 role on the photoinduced birefringence of silver-doped chalcogenide thin films

Messaddeq, Sandra Helena; Boily, Olivier; Santagneli, Silvia H.; El-Amraoui, Mohammed; Messaddeq, Y.

doi:10.1364/ome.6.001451

Cited by 17 publications

(3 citation statements)

References 29 publications

(29 reference statements)

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“…Messaddeq et al prepared Ag x (As 40 S 60 ) 100x thin films (x ¼ 7, 15, 25, and 50) by co-evaporation technique and studied the role of As 4 S 4 molecules on the photoinduced birefringence of these thin films. [13] The calculated density of states (DOS) based on s, p (sigma), and p lone pair orbitals was close to the experimental photoemission data, and it was found that As 2 S 3 and As 2 Se 3 had indirect gaps. Watanabe et al [14] used a tight-binding method to calculate energy bands of crystalline As 2 S 3 and random configurations of macromolecules in a-As 2 S 3 and suggested that intermolecular configuration and interactions in crystalline chalcogenides greatly affect the electronic structure.…”

Section: Introductionsupporting

confidence: 61%

Structural Distortions and Energy Band Structure of Ag‐Doped As₂S₃ and Ag₂S₃

Kaur

Tripathi

Prakash

2020

Physica Status Solidi (b)

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The density functional theory (DFT) with generalized gradient approximation (GGA) for exchange correlation potential as incorporated within SIESTA code is used to investigate the structural distortions and energy bands of AgxAs2 – xS3 (x = 0–2). The lattice parameters and cell volume change asymmetrically with an increase in Ag concentration due to asymmetric changes in electrostatic and strain field interactions. The optimized lattice geometry of As2S3, Ag1As1S3, and Ag2S3 is monoclinic, whereas for other configurations, it becomes triclinic. Unlike Ag2S3, the layering is not found in the structure of Ag2S3. The mobility gap decreases and then increases with an increase in Ag concentration. The minimum value of mobility gap is 0.04 eV for the configuration Ag1As1S3. The partial density of states (PDOS) of d orbital electrons significantly enhances with an increase in Ag concentration, and the structural changes in PDOS of s, p, and d orbital electrons suggest the weak and strong p–d hybridizations in valence and conduction bands, respectively. The reduction in the mobility gap suggests that Ag‐doped As2S3 is more conducting than As2S3 as observed experimentally.

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Section: Introductionsupporting

confidence: 61%

Structural Distortions and Energy Band Structure of Ag‐Doped As₂S₃ and Ag₂S₃

Kaur

Tripathi

Prakash

2020

Physica Status Solidi (b)

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“…In our recent work [39], it was demonstrated that due to the incorporation of Ag in the As-S thin-film, a structural rearrangement favouring the appearance of AgS 3/2 pyramids and As 4 S 4 molecules are formed. In order to explain the polarisation dependence of the laser-dewetted surface relief structure, we can assume that at the early stage of irradiation by a linearly polarised laser, structural As 4 S 4 cages units are reoriented and serve as anisotropic sensitive structural units.…”

Section: Effects Of the Thicknessmentioning

confidence: 97%

Laser-induced dewetting of silver-doped chalcogenide glasses

Douaud

Messaddeq

Boily

et al. 2018

Applied Surface Science

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We report the observation of laser-induced dewetting responsible for the formation of periodic relief structures in silver-based chalcogenide thin-films. By varying the concentration of silver in the Ag x (As 20 S 80) 100-x system (with x = 0, 4, 9 and 36), different surface relief structures are formed. The evolution of the surface changes as a function of laser parameters (power density, duration of exposure, and polarisation) as well as film thickness and silver concentration has been investigated. The scanning electron microscopy and atomic force microscopy images of irradiated spots show periodic ripples aligned perpendicularly to the electric field of incident light. Our results show that addition of silver into sulphur-rich chalcogenide thin-films improves the dewetting when compared to pure As 20 S 80 thinfilms. The changes in surface morphology were attributable to photo-induced chemical modifications and a laser-driven molecular rearrangement.

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“…Revutska et al [ 11 ] characterized As 2 S 3 glasses doped by 10 and 15 wt% Ag. Sandra et al [ 12 ] studied the role of As 4 S 4 molecules on the photoinduced birefringence of Ag x (As 40 S 60 ) 100− x thin films ( x = 7, 15, 25, 50). The bandgap tuning was observed [ 13 ] by X‐ray powder diffraction (XRPD) studies of Se‐, Cu‐, and Zn‐doped Sb 2 S 3 nanoparticles and dielectric constant of Cu‐doped Sb 2 S 3 was found between 2.10 and 2.45.…”

Section: Introductionmentioning

confidence: 99%

Ab Initio Investigation of Electronic and Optical Properties of Cu‐Doped As₂S₃

Dhiman,

Tripathi,

Prakash

2023

Physica Status Solidi (b)

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The density functional theory with generalized gradient approximation is used to investigate the structural, electronic and optical properties of Cu doped Cu0.125As2S3 and Cu0.25As2S3 configurations with Cu impurity at c‐face centre interstitial site. The As‐S bond lengths remain nearly the same but Cu‐S bond lengths decrease with increase in Cu concentration. Both the configurations are n‐type semiconductors which agree with the experimental observations. The density of Cu d states in the valence band increases with increase in Cu content. There is strong p‐d hybridization in valence and conduction bands in both the configurations. The calculated optical constants are strongly anisotropic upto 10 eV, however at higher energies the anisotropy diminishes. The broad peaks in the optical constants along || and axes are found in the vicinity of 2 eV. However, the peak heights increase and shift towards lower energy with increase in Cu content. Further static dielectric constant, refractive index and reflectivity increase and the optical band gap decreases with increase in Cu concentration. The calculated optical band gap is more close to the experimental value for Cu0.25As2S3 configuration. The comparison of optical constants shows that Cu0.25As2S3 may be as good choice as Ag0.25As2S3 for optical applications.This article is protected by copyright. All rights reserved.

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As_4S_4 role on the photoinduced birefringence of silver-doped chalcogenide thin films

Cited by 17 publications

References 29 publications

Structural Distortions and Energy Band Structure of Ag‐Doped As₂S₃ and Ag₂S₃

Structural Distortions and Energy Band Structure of Ag‐Doped As₂S₃ and Ag₂S₃

Laser-induced dewetting of silver-doped chalcogenide glasses

Ab Initio Investigation of Electronic and Optical Properties of Cu‐Doped As₂S₃

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As_4S_4 role on the photoinduced birefringence of silver-doped chalcogenide thin films

Cited by 17 publications

References 29 publications

Structural Distortions and Energy Band Structure of Ag‐Doped As2S3 and Ag2S3

Structural Distortions and Energy Band Structure of Ag‐Doped As2S3 and Ag2S3

Laser-induced dewetting of silver-doped chalcogenide glasses

Ab Initio Investigation of Electronic and Optical Properties of Cu‐Doped As2S3

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Structural Distortions and Energy Band Structure of Ag‐Doped As₂S₃ and Ag₂S₃

Structural Distortions and Energy Band Structure of Ag‐Doped As₂S₃ and Ag₂S₃

Ab Initio Investigation of Electronic and Optical Properties of Cu‐Doped As₂S₃