As-Grown Deposition of Superconducting MgB2 Thin Films by Multiple-Target Sputtering System

Energetics of Mg and B adsorption on polar zinc oxide surfaces from first principles

“…Several groups have reported lowtemperature growth of MgB 2 films on the Al 2 O 3 ͑0001͒ or Si ͑111͒ substrates using molecular beam epitaxy ͑MBE͒, [2][3][4] electron-beam evaporation, 5 pulsed laser deposition, 6 and sputtering. 7 However, these substrates have rather large lattice mismatch with MgB 2 ͑␦ Ӎ 20% ͒, which is unfavorable for the epitaxial growth. It has been reported that the use of in-plane-lattice buffer layers with little mismatch, such as AlN ͑␦ Ӎ 1.9% ͒ and TiZr ͑␦ Ӎ 3.6% ͒, with Al 2 O 3 ͑0001͒ substrate could improve the crystallinity of MgB 2 .…”

In situ growth of superconducting MgB2 thin films by molecular-beam epitaxy

“…There have already been many reports on the synthesis of superconducting MgB 2 films [2][3][4][5][6][7][8][9][10][11][12][13][14]. There are two complicating problems related to the preparation of superconducting MgB 2 films.…”

Two-band nature of upper critical fields in MgB2 thin films investigated by 37 T pulsed magnet

“…T c is 32 K for #Ti(10 nm) and 38 K for #Ti(50 nm). MgB 2 films prepared by NICT group were deposited on c-plane of a sapphire substrate using a carrousel-type multiple-targets sputtering system without any buffer layers [11]. They have a smooth surface as-grown at low-substrate temperatures.…”