2018
DOI: 10.1002/admt.201800342
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Artificial Synapse Emulated by Charge Trapping‐Based Resistive Switching Device

Abstract: The traditional Von Neumann architecture‐based computers are considered to be inadequate in the coming artificial intelligence era due to increasing computation complexity and rising power consumption. Neuromorphic computing may be the key role to emulate the human brain functions and eliminate the Von Neumann bottleneck. As a basic unit in the nervous system, a synapse is responsible for transmitting information between neurons. Resistive random access memory (RRAM) is able to imitate the synaptic functions b… Show more

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Cited by 113 publications
(114 citation statements)
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“…3c), demonstrating a typical spike-rate dependent plasticity (SRDP). 47 This short-term enhanced plasticity enables GAS to act as a dynamic lter for information transmission. 21 It is obvious that Li-GAS shows a better dynamic ltering ( Fig.…”
Section: Resultsmentioning
confidence: 99%
“…3c), demonstrating a typical spike-rate dependent plasticity (SRDP). 47 This short-term enhanced plasticity enables GAS to act as a dynamic lter for information transmission. 21 It is obvious that Li-GAS shows a better dynamic ltering ( Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Artificial synapses have been developed based on various structures, materials, and mechanisms to mimic the structure and synaptic plasticity of biological synapses. Conventional memory mechanisms (e.g., conductive filament, [54,75,[77][78][79][80][81][82][83][84][85][86] Schottky junction, [87][88][89] charge trapping, [82,[90][91][92][93][94][95] phase change, [75,[96][97][98] ferroelectricity, [99][100][101][102][103][104][105][106][107] ion migration [4,51,74,108] ) have been extended to the implementation of synaptic properties. Artificial synapses, i.e., transistors that exploit electrochemical reactions have also been developed.…”
Section: Mechanismsmentioning
confidence: 99%
“…in insulating layers, and the electron injection mechanism changes from Ohmic (ln(I) ∼ V α , α ≈ 1) to space-charge-limited-current (SCLC) (α ≈ 2) conduction in which the number of injected carriers exceeds the number of thermally generated carriers ( Figure 5c). [82,90,91] When the metal electrode and the insulating layer are in Ohmic contact and the trap-free state is maintained, the current is controlled by the space charge. In artificial synapses in which charge-trapping nanoparticles (NPs) (e.g., Au NP [90] and mica [91] ) have been added to the middle layer, the voltage caused trapping of charges in the nanomaterial, so current flow followed the SCLC conduction mechanism.…”
Section: Two-terminal Devicesmentioning
confidence: 99%
“…In addition to the application in flash memory, upconversion materials also can be applied on ReRAM to improve the resistive switching performance. Zhai et al combined 2D materials and upconversion nanoparticles to fabricate ReRAM. In the active layer between two electrodes, molybdenum disulfide (MoS 2 ) was introduced to form a heterostructure with NaYF 4 : Yb 3+ , Er 3+ upconversion nanoparticles.…”
Section: Photo‐tunable Memorymentioning
confidence: 99%