Arsenic-free high-temperature surface cleaning of molecular beam epitxy (MBE)-grown AlGaAs layer with new passivation structure

Iizuka, Kanji; Watanabe, H.; Suzuki, Tohru; Okamoto, Hiroshi

doi:10.1016/s0022-0248(98)01310-4

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“…1(a). First, oxide on semiinsulating GaAs (0 0 1) substrate was removed by As-free high-temperature surface cleaning method [6][7][8] in an annealing chamber of molecular beam epitaxy (MBE) system. Next, the substrate was transferred into a growth chamber (Riber MBE 32P), GaAs buffer layer of 300 nm was grown at 620 1C by the solid source MBE with the following conditions: As 4 /Ga flux ratio was 5, growth rate was 1 mm/h.…”

Section: Methodsmentioning

confidence: 99%