Arsenic doping in metalorganic chemical vapor deposition Hg1−<i>x</i>Cd<i>x</i>Te using tertiarybutylarsine and diethylarsine

Edwall, D. D.; Chen, J.‐S.; Bubulac, L. O.

doi:10.1116/1.585401

Cited by 25 publications

(2 citation statements)

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“…The greatest influence on the activity of arsenic in MCT grown by MOVPE has been the choice of dopant precursor. Arsine (AsH 3 ), 21,22 trimethylarsine (Me 3 As), 23 diethylarsine (Et 2 AsH), 24 t-butylarsine (Bu t AsH 2 ), 24 and phenylarsine (PhAsH 2 ) 25,26 have all been used. Activity of 60% was achieved with Et 2 AsH after high-temperature and vacancyfilling anneals for example.…”

Section: Literature Review Of Arsenic Doping In Mctmentioning

confidence: 99%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

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Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg 1-x Cd x Te) with arsenic is no exception. High-temperature (>400°C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.

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Section: Literature Review Of Arsenic Doping In Mctmentioning

confidence: 99%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

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“…7 However, the amphoteric behavior of arsenic, since it occupies both metal and nonmetal sites, giving donor and acceptor characters, respectively, [8][9][10] complicates the doping process. The electrical characteristics of As-doped HgCdTe have been reported recently, [11][12][13][14][15] including a 30% improvement of doping concentration, in the high doping limit by a doping method 14 at the University of Illinois at Chicago ͑UIC͒. However, the behavior of As impurity states in As-doped MBE HgCdTe is not yet well understood.…”

Section: ͓S0003-6951͑98͒01231-5͔mentioning

confidence: 96%

Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxy

Shi

Rujirawat

Ashokan

et al. 1998

Applied Physics Letters

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The p-type activation of arsenic (As) in (211)B mercury cadmium telluride (HgCdTe) grown by molecular beam epitaxy (MBE), with different compositions covering the 3–5 and 8–14 μm atmospheric transmission windows and after annealing at 300 °C is reported. The composition and thickness of the MBE layers were determined from Fourier transform infrared transmission measurements at room temperature. The ionization energies of shallow acceptors related to As in MBE HgCdTe layers with different Cd compositions have been obtained by fitting variable temperature Hall measurement results to a two-band nonparabolic Kane model. The results indicate that As incorporated during the MBE growth can be activated to provide a shallow acceptor level in MBE HgCdTe and the ionization energy of the As acceptor decreases with decreasing Cd composition, in agreement with the theory.

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MOVPE of II–VI Compounds

1997

CVD of Compound Semiconductors

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Arsenic doping in metalorganic chemical vapor deposition Hg1−xCdxTe using tertiarybutylarsine and diethylarsine

Cited by 25 publications

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As Doping in (Hg,Cd)Te: An Alternative Point of View

As Doping in (Hg,Cd)Te: An Alternative Point of View

Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxy

MOVPE of II–VI Compounds

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