Aromatizing unzipping polyester for EUV photoresist

Matsuzawa, Kensuke; Mesch, Ryan A.; Olah, Michael G.; Wang, Wade; Phillips, Scott T.; Willson, C. Grant

doi:10.1117/12.2085780

Cited by 3 publications

(2 citation statements)

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“…38−40 These resists possess an alternative source of chemical amplification, and it was anticipated that the lack of acid diffusion would lead to simultaneous improvement of the RLS parameters. Examples include poly(olefin sulfones), 41,42 poly-(esters), 43,44 and poly(acetals). 45−47 While many self-immolative resists are unable to achieve sensitivities comparable to typical CARs, a class of poly(acetals), poly(phthalaldehyde) (PPA), has proven to be one of the most promising due to its unprecedented rate of depolymerization in the solid phase.…”

Section: ■ Introductionmentioning

confidence: 99%

“…A second major initiative to overcome the RLS trade-off was through the advancement of self-immolative polymers. − These resists possess an alternative source of chemical amplification, and it was anticipated that the lack of acid diffusion would lead to simultaneous improvement of the RLS parameters. Examples include poly(olefin sulfones), , poly(esters), , and poly(acetals). − While many self-immolative resists are unable to achieve sensitivities comparable to typical CARs, a class of poly(acetals), poly(phthalaldehyde) (PPA), has proven to be one of the most promising due to its unprecedented rate of depolymerization in the solid phase. Unfortunately, PPA and related materials are afflicted with a tendency to contaminate the optics of EUV instruments and a lack of bench stability.…”

Section: Introductionmentioning

confidence: 99%

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Modular Synthesis of Phthalaldehyde Derivatives Enabling Access to Photoacid Generator-Bound Self-Immolative Polymer Resists with Next-Generation Photolithographic Properties

et al. 2022

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The resolution, line edge roughness, and sensitivity (RLS) trade-off has fundamentally limited the lithographic performance of chemically amplified resists. Production of next-generation transistors using extreme ultraviolet (EUV) lithography depends on a solution to this problem. A resist that simultaneously increases the effective reaction radius of its photogenerated acids while limiting their diffusion radius should provide an elegant solution to the RLS barrier. Here, we describe a generalized synthetic approach to phthalaldehyde derivatives using sulfur(VI) fluoride exchange click chemistry that dramatically expands usable chemical space by enabling virtually any non-ionic photoacid generator (PAG) to be tethered to phthalaldehyde. The resulting polymers represent the first ever PAG-tethered self-immolative resists in an architecture that simultaneously displays high contrast, extraordinary sensitivity, and low roughness under EUV exposure. We believe this class of resists will ultimately enable researchers to overcome the RLS trade-off.

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