Argon vs. air atmosphere in close spaced vapor transport deposited tin sulfide thin films

Andrade‐Arvizu, Jacob; Courel, Maykel; García-Sánchez, M.F.; González, R.; Jiménez, David; Becerril‐Romero, Ignacio; Ramírez, A.A.; Vigil‐Galán, O.

doi:10.1016/j.solener.2020.07.070

Cited by 8 publications

(3 citation statements)

References 42 publications

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“…Mobility in these films is similar to other values reported for polycrystalline SnS. 58,59 The decreasing resistivity and decreasing Seebeck coefficient lead to a relatively stable power factor from 0.017 to 0.049 μW cm -1 K -2 at 300 K and 450 K, respectively. The thermoelectric properties of the SnSe film were investigated similarly, as shown in Fig.…”

Section: Thermoelectric Propertiessupporting

confidence: 85%

ⁿBu₂Sn(SⁿBu)₂ and ⁿBu₃SnEⁿBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

et al. 2021

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Section: Thermoelectric Propertiessupporting

confidence: 85%

ⁿBu₂Sn(SⁿBu)₂ and ⁿBu₃SnEⁿBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

et al. 2021

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“…Among them, Cu(In,Ga)Se 2 (CIGS) shows probably the most remarkable progress with efficiencies now exceeding 23% . On the other hand, disruptive emergent chalcogenide materials such as Sb 2 Se 3 , − SnS, − and, in particular, Cu 2 ZnSn(S x Se 1– x ) 4 (CZTSSe or kesterite)-based solar cells, while offering the promise of being earth-abundant and free of critical raw alternative to CIGS, have yet to reach a similar performance breakthrough showing more benefits. − Being close cousin to chalcopyrite, it is a logical approach to take inspiration from the previous successful strategies developed for CIGS and transfer them to kesterite-based devices. In this regard, band gap ( E G ) engineering proved to be a turning point for CIGS, leading to great advances in the development of this technology .…”

Section: Introductionmentioning

confidence: 99%

Rear Band gap Grading Strategies on Sn–Ge-Alloyed Kesterite Solar Cells

Andrade‐Arvizu

Fonoll‐Rubio

Sánchez

et al. 2020

ACS Appl. Energy Mater.

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Kesterite solar cells are at a crossroads, and a significant breakthrough in performance is needed for this technology to stay relevant in the upcoming years. In this work, we propose to follow the proven strategy of band engineering to assist charge carrier collection taking inspiration from chalcopyrite solar cells. Using a process based on a combination of metallic precursor sputtering and chalcogen-reactive annealing, we achieve controlled cationic substitutions by partly replacing Sn by Ge, hence tailoring several rear band gap grading profiles along the absorber thickness. A complete set of results is presented, with samples ranging from pure Sn to pure Ge compounds. The formation of a rear band gap grading is determined through different characterization techniques, specifically through a combination of glow discharge optical emission and Auger spectroscopies with an advanced multiwavelength Raman spectroscopy analysis carried out at the front and back (rear) sides of the films using a lift-off process. As such, a preferential Ge enrichment toward the back of the absorber is unequivocally demonstrated in kesterite absorbers and further applied to complete devices for deliberately generating distinct rear band gap profiles, leading to an efficient back surface field that potentially enhances the carrier selectivity of the back interface. The electrical analysis of the complete devices shows a complex interplay between the benefits of band gap grading and possible Ge-related defects in the absorber. Using optimized synthesis conditions, an absolute increase in efficiency (compared to the Ge-free reference) is obtained for the record device (η > 9%) without any antireflective coating or metallic grid. This performance enhancement is mostly ascribed to the presence of a drift electric field assisting in the carrier collection while preventing back side recombination. These results confirm the possibility of generating back band gap grading in kesterite solar cells and open the way to further development of the kesterite photovoltaic technology toward higher efficiencies through tailored band gap engineering.

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“…As shown results, the absorption edge was observed red shifts with increasing the substrate temperature to 520 °C. The optical band-gap of InAlN thin films was estimated by the extrapolation of the linear portion of αhv 2 versus hv plots using the following relation [30][31][32].…”

Section: Resultsmentioning

confidence: 99%

Effects of growth temperature on structural and electrical properties of in-rich InAlN–GaN heterostructures by radio-frequency metal–organic molecular beam epitaxy

Chen¹,

Chiu²,

Chen³

et al. 2023

Surf. Topogr.: Metrol. Prop.

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In-rich InAlN is a promising nitride semiconductor alloy for high-efficiency solar cells and wide-range light-emitting diodes due to its tunable bandgap from 0.7 to 6.2 eV. However, incomplete characterization has led to inconsistent fundamental properties in some studies. The aim of this study was to comprehensively investigate the structural, optical, and electrical properties of In-rich InAlN films grown on GaN/Al2O3 templates by RF-MOMBE at various temperatures. The methodology involved state-of-the-art metrology techniques, such as high-resolution x-ray diffraction (HRXRD), scanning electron microscopy (FE-SEM), Hall effect measurements, and transmission electron microscopy (TEM). The results showed that all InxAl1-xN films were epitaxially grown on the GaN/Al2O3 template, with the indium composition (x) decreasing with increasing growth temperature. Furthermore, phase separation of the In-rich InAlN films occurred at high growth temperatures(>550oC), resulting in a relatively smooth surface. The optical absorption method measured the band-gap of the InxAl1-xN films, which ranged from 1.7 to 1.9 eV for x values between 0.77 and 0.91. The mobility and carrier concentrations of all In-rich InAlN films were measured at ~60−277 cm2/V-s and 2–7 × 1019 cm3 in the growth temperature of range 450–610 °C, respectively. In conclusion, our comprehensive characterization using advanced metrology methods provides valuable insights into the properties of In-rich InAlN films, which can inform future optimization of these materials for various applications.

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Argon vs. air atmosphere in close spaced vapor transport deposited tin sulfide thin films

Cited by 8 publications

References 42 publications

ⁿBu₂Sn(SⁿBu)₂ and ⁿBu₃SnEⁿBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

ⁿBu₂Sn(SⁿBu)₂ and ⁿBu₃SnEⁿBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

Rear Band gap Grading Strategies on Sn–Ge-Alloyed Kesterite Solar Cells

Effects of growth temperature on structural and electrical properties of in-rich InAlN–GaN heterostructures by radio-frequency metal–organic molecular beam epitaxy

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Argon vs. air atmosphere in close spaced vapor transport deposited tin sulfide thin films

Cited by 8 publications

References 42 publications

nBu2Sn(SnBu)2 and nBu3SnEnBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

nBu2Sn(SnBu)2 and nBu3SnEnBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

Rear Band gap Grading Strategies on Sn–Ge-Alloyed Kesterite Solar Cells

Effects of growth temperature on structural and electrical properties of in-rich InAlN–GaN heterostructures by radio-frequency metal–organic molecular beam epitaxy

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Product

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About

ⁿBu₂Sn(SⁿBu)₂ and ⁿBu₃SnEⁿBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

ⁿBu₂Sn(SⁿBu)₂ and ⁿBu₃SnEⁿBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films