Abstract:The irradiation of undoped ZnO films with electron-cyclotron-resonance argon plasma was found to improve its transparent conductive properties. While both carrier concentration and Hall mobility increased with the irradiation time for all ZnO films, reduction in resistivity was more remarkable for films having higher resistivities. Optical transmittance in the visible wavelength continuously improved and the interference fringe for thick films was red shifted. These observations can consistently be explained b… Show more
“…H 2 plasma treatment can reduce the ϕ of ZnO films [7]. The irradiation of undoped ZnO films with Ar plasma was found to improve its transparent conductive properties, which can be explained that collision-induced desorption or low-energy sputtering by Ar ions removed oxygen atoms within ZnO crystallites, which produced electron carriers and enlarged crystallites [8]. The oxygen plasma treatment can efficiently suppress the chemisorption sites (primary the oxygen * Corresponding author.…”
“…H 2 plasma treatment can reduce the ϕ of ZnO films [7]. The irradiation of undoped ZnO films with Ar plasma was found to improve its transparent conductive properties, which can be explained that collision-induced desorption or low-energy sputtering by Ar ions removed oxygen atoms within ZnO crystallites, which produced electron carriers and enlarged crystallites [8]. The oxygen plasma treatment can efficiently suppress the chemisorption sites (primary the oxygen * Corresponding author.…”
“…For the sample with Ar plasma treatment, the peak is at ~ 531.5 eV, which shifts to lower binding energy, and gets much more pronounced in comparison with the as-deposited sample, indicating that more V o are generated due to Ar plasma treatment, and chemisorbed oxygen is effectively removed. The increasing of n-type dopants in ZnO results in the thinner tunneling barrier and lower series resistance at interface, being responsible for the reduction in R c [ 36 ]. Fig.…”
We investigate the metal-insulator-semiconductor contacts on n-Ge utilizing a ZnO interfacial layer (IL) to overcome the Fermi-level pinning (FLP) effect at metal/Ge interface and reduce the barrier height for electrons. A small conduction band offset of 0.22 eV at the interface between ZnO and n-Ge is obtained, and the ZnO IL leads to the significant reduced contact resistance (Rc) in metal/ZnO/n-Ge compared to the control device without ZnO, due to the elimination of FLP. It is observed that the argon (Ar) plasma treatment of ZnO can further improve the Rc characteristics in Al/ZnO/n-Ge device, which is due to that Ar plasma treatment increases the concentration of oxygen vacancy Vo, acting as n-type dopants in ZnO. The ohmic contact is demonstrated in the Al/ZnO/n-Ge with a dopant concentration of 3 × 1016 cm−3 in Ge. On the heavily doped n+-Ge with a phosphor ion (P+) implantation, a specific contact resistivity of 2.86 × 10− 5 Ω cm2 is achieved in Al/ZnO/n+-Ge with Ar plasma treatment.
“…It is known [11] that the placement of an undoped ZnO film into argon atmosphere results in an increase in the conductance due to the increase in both con centration and mobility of charge carriers. The increase in the concentration and mobility of charge carriers is associated, according to [11], with oxygen desorption from the surface of nanocrystals.…”
Section: Resultsmentioning
confidence: 99%
“…The increase in the concentration and mobility of charge carriers is associated, according to [11], with oxygen desorption from the surface of nanocrystals. We sug gest that the same process may also take place in our nanocrystalline In 2 O 3 samples.…”
Photoelectric properties of nanocrystalline indium oxide synthesized by the sol-gel method with nanocrystal sizes of 7-20 nm have been studied. An increase in the conductance by UV light illumination of several orders of magnitude and the retention of this high conducting state after the light is switched off is revealed. The kinetics of photoconductivity decay in air, vacuum, and argon at room temperature is studied; it is found that the photoconductivity decay is described by an expanded exponent. A conclusion about the determining role of oxygen molecules in the phenomenon of residual photoconductivity is made. A model is proposed which explains permanent photoconductivity decay in nanocrystalline indium oxide. A correlation between structural and photoelectric features in the object under study is found.
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