Argon–germane <i>in situ</i> plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

Douglas, Erica Ann; Sheng, Josephine Juin-Jye; Verley, Jason C.; Carroll, Malcolm S.

doi:10.1116/1.4921590

Cited by 4 publications

(2 citation statements)

References 34 publications

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“…The crystallite sizes for the Fe 3 Si films treated at 100 and 150 W were both relatively smaller than that of the 50 W treated films due to orientational disarrangement caused by the more energetic ions that bombarded the surface[30,31]. In contrast, the change of grain size scarcely occurred when using Ar plasma treatment due to the nature of the noble gas, which does not cause epitaxial growth[32].…”

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confidence: 93%

Physical Properties of Fe3Si Films Coated through Facing Targets Sputtering after Microwave Plasma Treatment

et al. 2021

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Fe3Si films are deposited onto the Si(111) wafer using sputtering with parallel facing targets. Surface modification of the deposited Fe3Si film is conducted by using a microwave plasma treatment under an Ar atmosphere at different powers of 50, 100 and, 150 W. After the Ar plasma treatment, the crystallinity of the coated Fe3Si films is enhanced, in which the orientation peaks, including (220), (222), (400), and (422) of the Fe3Si are sharpened. The extinction rule suggests that the B2–Fe3Si crystallites are the film’s dominant composition. The stoichiometry of the Fe3Si surfaces is marginally changed after the treatment. An increase in microwave power damages the surface of the Fe3Si films, resulting in the generation of small pinholes. The roughness of the Fe3Si films after being treated at 150 W is insignificantly increased compared to the untreated films. The untreated Fe3Si films have a hydrophobic surface with an average contact angle of 101.70°. After treatment at 150 W, it turns into a hydrophilic surface with an average contact angle of 67.05° because of the reduction in the hydrophobic carbon group and the increase in the hydrophilic oxide group. The hardness of the untreated Fe3Si is ~9.39 GPa, which is kept at a similar level throughout each treatment power.

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confidence: 93%

Physical Properties of Fe3Si Films Coated through Facing Targets Sputtering after Microwave Plasma Treatment

et al. 2021

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“…For the germanium epitaxy on silicon, due to a 4.2% lattice mismatch, there are commonly abundant threading dislocation defects present in the Ge thin film. Special CVD processes are required to improve its crystalline quality such as multiple-step growth, ultrahigh vacuum (UHV), and nonconventional hydride chemicals, − Second, it could be difficult to achieve germanium nucleation on the sapphire surface, similar to the case of Ge deposition on silicon oxide (SiO 2 ), where it is almost impossible to deposit germanium on the SiO 2 substrate because GeH 4 will not decompose on the surface even at a high temperature of 600 °C. Thus, the germanium thin film grown on SiO 2 using CVD normally needs a silicon seed layer. ,, Third, GeH 4 is a dangerous and a very tightly controlled precursor gas.…”

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confidence: 99%

Heteroepitaxy of High-Mobility Germanium on Sapphire (0001) with Magnetron Sputtering

Wen

Washington

et al. 2020

ACS Appl. Electron. Mater.

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As an excellent semiconductor material with low band gap and high carrier mobility, germanium is widely used in the semiconductor industry in photoelectronic devices, high-frequency radio frequency (rf) circuits and devices, etc. Compared to bulk germanium wafer and silicon-based germanium on insulator (GOI) materials, the germanium on sapphire (GOS) substrate offers a highly cost-effective solution with several important advantages, including low thermal expansion coefficient mismatch, high insulator resistivity, lower rf losses, and superior crosstalk suppression. In this work, we present a method to grow a high-quality thin germanium epitaxial film on a sapphire (0001) substrate using direct-current (DC) sputtering at an elevated temperature of 600 °C. We demonstrate that thermal annealing at 850 °C reduced the germanium (111) twinning, increased the size of crystalline domains in the germanium film and thus further improved the crystalline quality. For a film with a thickness of 500 nm, the hole Hall mobility increased to 440 cm2/V·s after thermal annealing, which is about 10 times more than that of the as-sputtered film. For a 2.0 μm film, the hole Hall mobility increased to 824 cm2/V·s, which has not been reported in the literature for a GOS film. This method offers a simple but efficient way to fabricate a GOS substrate for optical electronic device applications.

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Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Alharthi

Grant

Dou

et al. 2018

Journal of Elec Materi

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Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

Cited by 4 publications

References 34 publications

Physical Properties of Fe3Si Films Coated through Facing Targets Sputtering after Microwave Plasma Treatment

Physical Properties of Fe3Si Films Coated through Facing Targets Sputtering after Microwave Plasma Treatment

Heteroepitaxy of High-Mobility Germanium on Sapphire (0001) with Magnetron Sputtering

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

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