Area selective deposition using alternate deposition and etch super-cycle strategies

Bonvalot, M.; Vallée, C.; Mannequin, C.; Jaffal, Moustapha; Gassilloud, R.; Possémé, N.; Chevolleau, T.

doi:10.1039/d1dt03456a

Cited by 7 publications

(6 citation statements)

References 49 publications

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“…Thus, self‐aligned techniques provide an advantage as they use one lithography step and additional deposition and etch steps to define spacer‐like features. [ 29 ]…”

Section: Ald For Multiple Patterningmentioning

confidence: 99%

“…Thus, selfaligned techniques provide an advantage as they use one lithography step and additional deposition and etch steps to define spacer-like features. [29] The simplest example of a self-aligned technique is SADP, also referred to as pitch division, spacer double patterning, or sidewall-assisted DP. To define a spacer-like feature, the SADP process involves one lithography step, and additional deposition and etching processes.…”

Section: Ald For Multiple Patterningmentioning

confidence: 99%

“…There are various extensive reviews on AS-ALD that explain the precursor chemistries, use of ALD for nanopatterning, and strategies for integrated approaches. [16,29,34] Figure 5b shows a schematic of the AS-ALD process by area deactivation.…”

Section: Area-selective Aldmentioning

confidence: 99%

See 2 more Smart Citations

Atomic Layer Deposition Beyond Thin Film Deposition Technology

Yasmeen

Ryu

Lee

et al. 2022

Adv Materials Technologies

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Atomic layer deposition (ALD) is well known as the most advanced coating technique so far due to its unique deposition characteristics, such as uniformity and 3D conformality. ALD is not limited to coating technologies alone; however, over the past few decades, it has been extended beyond coating technologies to address several bottlenecks in the semiconductor industry. This short review article provides a summary of previous studies published on various approaches to using ALD to overcome the technological challenges in Si device fabrication beyond, that is, ALD for multiple patterning, area‐selective atomic layer deposition, atomic layer etching, and ALD for dry photoresist. The purpose of this review is to determine the existing trend in ALD for noncoating applications and to understand and provide a layout of what ALD can bring in the future. In addition, it helps in appreciating the potential of ALD in existing and future noncoating processes. Furthermore, this study provides a developing route for ALD in other noncoating applications in the semiconductor industry. It is believed this review would aid ALD researchers in its use in various noncoating processes in the future to extend Moore's law.

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“…Thus, self‐aligned techniques provide an advantage as they use one lithography step and additional deposition and etch steps to define spacer‐like features. [ 29 ]…”

Section: Ald For Multiple Patterningmentioning

confidence: 99%

Section: Ald For Multiple Patterningmentioning

confidence: 99%

See 1 more Smart Citation

Atomic Layer Deposition Beyond Thin Film Deposition Technology

Yasmeen

Ryu

Lee

et al. 2022

Adv Materials Technologies

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“…Selected-area deposition (SAD) is a known key process for the next-generation integration process. SAD is considered a chemical or physical bottom-up process that performs a desired and uniform deposition in the patterned area of the thin films [20,21]. In this study, Ni-B films were selectively electroless deposited on Cu films to inhibit oxidation [22].…”

Section: Introductionmentioning

confidence: 99%

In-situ temperature-dependent sheet resistance study of Cu films in oxygen ambient for heterogeneous integrations

Chavan,

Kim,

Choi

et al. 2024

Nanotechnology

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Controlling and preventing Cu oxidation is crucial for improving the performance and reliability of Cu-Cu bonding. Ni-B films were selectively deposited on Cu films to block the Cu oxidation. The resistivity changes of the Cu films in N2 and O2 ambient were measured by using a four-point probe in the in-situ temperature-dependent resistance measurements at the temperature from room temperature to 400°C. The resistivity changes of the 100nm-thick Cu films without Ni-B increased rapidly at a higher temperature (284°C) in the O2 ambiance. The change of resistivity-increase of 100nm-thick Cu with ~50 nm-thick Ni-B (top) film was lower than the Cu films without Ni-B films due to the blocking diffusion of O2 atoms by the Ni-B films. The resistivity-change and oxidation barrier properties were studied using SEM, FIB, TEM, EDX, and SIMS tools. The proposed article will be helpful for the upcoming advancement in Cu-Cu bonding using selected-area deposition.

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“…The biggest advantage is that ASE is much more defect-tolerant compared to ASD. In ASD, eventually, some growth will take place also in the non-growth areas. − To mitigate this problem, additional etch steps must be used. ASE is not necessarily perfectly area-selective either; i.e., some amount of the polymer is etched also on the unwanted areas.…”

Section: Introductionmentioning

confidence: 99%

Area-Selective Etching of Poly(methyl methacrylate) Films by Catalytic Decomposition

Lasonen,

Vihervaara,

Popov

et al. 2023

Chem. Mater.

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Area-selective etching (ASE) of polymers is a new, inventive, and simple self-aligned patterning technique which has the potential to become an important method for the fabrication of semiconductor devices. A polymer film is etched by using etchant gases, which diffuse through the polymer and are activated by catalytic materials underneath the polymer. The polymer is decomposed locally on top of catalytically active materials, while on top of catalytically inactive materials, the polymer stays intact. This makes the process area-selective and self-aligned, which avoids edge placement errors and other defects. The patterned polymer can be exploited in subsequent area-selective deposition or lift-off processes. In this paper, we study ASE of poly(methyl methacrylate) (PMMA) by using Pt, CeO 2 , Ti, and Cu as catalytic materials in an O 2 , H 2 , or inert atmosphere. Native SiO 2 and Al 2 O 3 were used as non-catalytic surfaces. The catalytic decomposition of PMMA on Pt and CeO 2 in the air was clean; i.e., no intermediates in the middle of the process or any residue after the process were found on the surface. It was also demonstrated that very small amounts of Pt or CeO 2 , even down to a fraction of a monolayer, were enough to show the catalytic effect. Ti showed a clear catalytic effect in the H 2 and inert atmospheres. Copper oxide, rather than metallic copper, was found to promote the decomposition of PMMA in the H 2 and inert atmospheres. Finally, the feasibility of the overall patterning process was demonstrated on a 100 nanometer scale by ASE of PMMA followed by atomic layer deposition of Ni using Pt as the catalytic surface and native SiO 2 as the non-catalytic surface.

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Area selective deposition using alternate deposition and etch super-cycle strategies

Abstract: Area Selective Deposition (ASD) is a bottom-up process leading to a uniform deposit in only desired areas of a patterned substrate, avoiding the use of photolithography for patterning. However, whatever...

Cited by 7 publications

References 49 publications

Atomic Layer Deposition Beyond Thin Film Deposition Technology

Atomic Layer Deposition Beyond Thin Film Deposition Technology

In-situ temperature-dependent sheet resistance study of Cu films in oxygen ambient for heterogeneous integrations

Area-Selective Etching of Poly(methyl methacrylate) Films by Catalytic Decomposition

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