Are Diamonds a MEMS' Best Friend?

Auciello, Orlando; Pacheco, Sergio; Sumant, Anirudha V.; Gudeman, C.; Sampath, S.; Datta, Animesh; Carpick, Robert W.; Adiga, Vivekananda P.; Zürcher, P.; Ma, Zhenqiang; Yuan, Hao-Chih; Carlisle, John A.; Kabius, B.; Hiller, Jon; Srinivasan, Sudarsan

doi:10.1109/mmm.2007.907816

Cited by 80 publications

(36 citation statements)

References 43 publications

(22 reference statements)

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“…[149] Fabrication of UNCD MEMS resonators and switches was recently reviewed. [150] NCD films have been incorporated into silicon on insulator (SOI) wafers. [69][70][71] Chemically modified NCD and UNCD diamond surfaces are proving to be an important and stable platform for chemical and DNA sensing.…”

Section: Applicationsmentioning

confidence: 99%

The CVD of Nanodiamond Materials

Butler

Sumant

2008

Chemical Vapor Deposition

338

261

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The growth and characteristics of nanocrystalline diamond thin films with thicknesses from 20 nm to less than 5 mm are reviewed. These materials contain between 95% and >99.9% diamond crystallites, the balance being made up from other forms of carbon. Within this class of materials there is a continuous range of composition, characteristics, and properties which depend on the nucleation and growth conditions. It is convenient to classify these films as either ultra-nanocrystalline-diamond (UNCD) or nanocrystalline-diamond (NCD) based on their microstructure, properties, and growth environment. In general, UNCD materials are composed of small particles of diamond ca. 2-5 nm in size with sp 2 -carbon bonding between the particles. UNCD is usually grown in argon-rich, hydrogen-poor CVD environments, and may contain up to 95-98% sp 3 -bonded carbon. NCD materials start with high density nucleation, initiating nanometer-sized diamond domains which grow in a columnar manner with the grain size coarsening with thickness. NCD is generally grown in carbon-lean and hydrogen-rich environments. NCD and UNCD exhibit an interesting range of physical properties which find use in X-ray windows and lithography, micro-and nanomechanical and optical resonators, tribological shaft seals and atomic force microscopy (AFM) probes, electron field emitters, platforms for chemical and DNA sensing, and many other applications.

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Section: Applicationsmentioning

confidence: 99%

The CVD of Nanodiamond Materials

Butler

Sumant

2008

Chemical Vapor Deposition

338

261

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“…Ultra-hard, diamond-like materials are emerging as solutions to reduce friction, adhesion, and wear of the same components. [ 21 ] Therefore, interfaces between these two materials have signifi cant technological relevance.…”

Section: Introductionmentioning

confidence: 99%

Measurement of the Length and Strength of Adhesive Interactions in a Nanoscale Silicon–Diamond Interface

Jacobs¹,

Lefever²,

Carpick³

2015

Adv Materials Inter

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the interaction (characterized by the range of adhesion z 0 ).The intrinsic work of adhesion W adh is the energy per unit area required to separate two planar surfaces from equilibrium contact to infi nite separation. In terms of surface energy (γ i of surface i ) and interfacial energy (γ ij between surfaces i and j ), the work of adhesion is calculated as follows:In accordance with prior literature on adhesion and roughness, [ 9 ] the intrinsic work of adhesion W adh,int is defi ned as the work of adhesion between two perfectly fl at, planar surfaces. While W adh,int is a continuum concept, it can be robustly mapped onto an atomistic description of two atomically fl at, single-crystal surfaces in contact. The effective work of adhesion, W adh,eff , is defi ned as the work of adhesion for the same material pair and the same global geometry (planar), but with the addition of local surface roughness on one or both surfaces. The distinction between W adh,int and W adh,eff is shown schematically in Figure 1 . The W adh,int is determined by the identity of the materials in contact, and the environment, whereas W adh,eff is a function of W adh,int and the local surface topography. For hard, non-conforming materials, W adh,eff is typically much smaller than W adh,int . The primary reason for this is that the roughness increases the effective separation between the two materials, and therefore signifi cantly increases γ ij between the materials as they can no longer make intimate contact. Roughness can also increase the surface energies γ i and γ j , but this effect is typically overwhelmed by the change in γ ij . This distinction is drawn because many experimental techniques exist to measure W adh,eff (for example, using microfabricated beam tests [ 10 ] ), but generally applicable techniques to deduce from this the W adh,int are not well established.Physically, z 0 describes the equilibrium separation distance between perfectly fl at surfaces, i.e., the separation distance at which their interaction force is zero. However, in many mathematical descriptions of adhesion (for instance, refs. [ 5,7,8,11 ] ) z 0 also scales the distance over which adhesion acts for a particular material. Therefore, the parameter z 0 is referred to in this paper as the "range of adhesion," (in accordance with Greenwood, [ 5 ] who calls it the "range of action of the surface forces").The adhesive interactions between nanoscale silicon atomic force microscope (AFM) probes and a diamond substrate are characterized using in situ adhesion tests inside of a transmission electron microscope (TEM). In particular, measurements are presented both for the strength of the adhesion acting between the two materials (characterized by the intrinsic work of adhesion W adh,int ) and for the length scale of the interaction (described by the range of adhesion z 0 ). These values are calculated using a novel analysis technique that requires measurement of the AFM probe geometry, the adhesive force, and the position where the snap-in instability occurs. Values ...

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“…Work has shown that UNCD films are pinhole free and have lower residual stress than traditional MCD materials [4][5][6][7]. These unique properties have facilitated coverage of micro-and nano-electrochemical systems (MEMS/NEMS) [5,[7][8][9], and hold promise for other unique applications.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the performance and failure mechanisms of boron-doped ultrananocrystalline diamond electrodes

et al. 2011

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This research investigated the anodic stability of boron-doped ultrananocrystalline diamond (BD-UNCD) film electrodes on a variety of substrates (Si, Ta, Nb, W, and Ti) at a current density of 1 A cm -2 . At an applied charge of 100 A h cm -2 , measurable BD-UNCD film wear was not observed using SEM cross-sectional measurements. However, anodic treatment of the electrodes resulted in surface oxidation and film delamination, which caused substantial changes to the electrochemical properties of the electrodes. The substrate roughness, substrate electroactivity, and compactness of the substrate oxide were key parameters that affected film adhesion, and the primary mechanism of electrode failure was delamination of the BD-UNCD film. Substrate materials whose oxides had a larger coefficient of thermal expansion relative to the reduced metal substrates resulted in film delamination. The approximate substrate stability followed the order of:

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Are Diamonds a MEMS' Best Friend?

Cited by 80 publications

References 43 publications

The CVD of Nanodiamond Materials

The CVD of Nanodiamond Materials

Measurement of the Length and Strength of Adhesive Interactions in a Nanoscale Silicon–Diamond Interface

Characterization of the performance and failure mechanisms of boron-doped ultrananocrystalline diamond electrodes

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