Ar/O2 and H2O plasma surface modification of SnO2 nanomaterials to increase surface oxidation

Stuckert, Erin P.; Fisher, Ellen R.

doi:10.1016/j.snb.2014.11.049

Cited by 34 publications

(35 citation statements)

References 45 publications

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“…Although it is very tricky to reveal the complicated surface reactions during PEALD of SH-SnO2, the morphology change of the SnO2 films from smooth SnO2 surface to rod-shaped porous structure at deposition temperatures of >250 °C might be ascribed to the partial reduction of SnO2 to Sn metal by reductive H-containing species in The formation of porous nanostructured SnO 2 is consistent with the noticeably low refractive index of the SH-SnO 2 films grown at 250 • C and 300 • C. Although it is very tricky to reveal the complicated surface reactions during PEALD of SH-SnO 2 , the morphology change of the SnO 2 films from smooth SnO 2 surface to rod-shaped porous structure at deposition temperatures of >250 • C might be ascribed to the partial reduction of SnO 2 to Sn metal by reductive H-containing species in H 2 O plasma, followed by thermal etching via Sn evaporation or agglomeration of the Sn metal. It has been reported that H 2 O plasma treatment on SnO 2 film resulted in a morphological change to nanoglobular structure due to reduction of SnO 2 to Sn [29]. At the higher growth temperature of >350 • C, SH-SnO 2 resulted in more porous surface due to much severe reduction of SnO 2 and Sn evaporation/agglomeration (data not shown here).…”

Section: Resultsmentioning

confidence: 52%

“…Coatings 2020, 10, x FOR PEER REVIEW 7 of 10 nanoglobular structure due to reduction of SnO2 to Sn [29]. At the higher growth temperature of >350 °C, SH-SnO2 resulted in more porous surface due to much severe reduction of SnO2 and Sn evaporation/agglomeration (data not shown here).…”

Section: Resultsmentioning

confidence: 85%

“…Although O 2 plasma has been extensively employed as an oxidizing agent in ALD and other thin-film deposition processes, the role of H 2 O plasma in ALD process is still unclear because H 2 O plasma contains the reductive species of H 2 , H * , and H + , as well as the oxidative species of O 2 , O * , and OH [28]. Besides, Stuckert et al and Choi et al reported that H 2 O plasma treatment on SnO 2 surface resulted in the reduction of SnO 2 to metallic Sn, implying that H 2 O plasma can act as a reducing agent rather than as an oxidant [29,30]. In contrast, some previous reports on PEALD processes revealed that H 2 O plasma could be utilized as an oxidizing co-reactant for the growth of ZnO and TiO 2 films [24,31].…”

Section: Methodsmentioning

confidence: 99%

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Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

et al. 2020

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Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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Section: Resultsmentioning

confidence: 52%

Section: Resultsmentioning

confidence: 85%

Section: Methodsmentioning

confidence: 99%

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Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

et al. 2020

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“…We have previously noted a similar increase in %O with treatment time for SnO 2 nanoparticles exposed to a 100% H 2 O plasma. 34 Representative high-resolution Ti 2p , O 1s , and C 1s XPS spectra prior to and post H 2 plasma exposure (p = 100 mTorr, P = 150 W, and t = 1 min) are shown in Figure 6. High-resolution Ti 2p spectra of the UT TiO 2 material (Figure 6a) show peaks for Ti 2p3/2 and Ti 2p1/2 at binding energies of 458.8 and 464.7 eV, respectively, corresponding to surface titanium in the Ti 4+ oxidation state.…”

Section: Resultsmentioning

confidence: 99%

Employing Optical Emission Spectroscopy to Elucidate the Impact of Titanium Dioxide in Plasma-Assisted Catalysis

Surksum

Fisher

2021

J. Phys. Chem. C

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The roles of gas phase, gas−surface interface, and material properties of the catalyst must be understood to fully realize future applications of plasma-assisted catalysis (PAC) for pollution remediation. This requires understanding of fundamental processes contributing to plasma−catalyst synergy, including determination of molecular temperatures. Optical emission spectroscopy (OES) was employed for gas-phase processes in H 2 and CH 4 inductively coupled plasmas in the presence of catalytic TiO 2 . TiO 2 introduction has a minimal effect on the rotational temperature of H 2 [T R (H 2 )] in 100% H 2 plasmas but reduces T R (H 2 ) by ≤300 K in 100% CH 4 plasmas. Time-resolved OES studies echo energy partitioning results and reveal further kinetic details on H 2 formation and the impact of catalysts on gas-phase processes. Comprehensive analysis of the catalyst before and after plasma exposure reveals H 2 plasmas act as etching systems whereas competing etching and deposition processes occur under some conditions in CH 4 plasmas.

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“…Among the various methods used to improve the functional properties of metal oxide layers, plasma treatment is of particular interest [11][12][13]. Analysis of changes in the optical parameters and structural characteristics of tin dioxide after plasma treatment allows us to better understand the dynamics of changes in the physical properties of thin films of tin dioxide.…”

Section: Introductionmentioning

confidence: 99%

The effect of three-minute exposure of oxygen plasma on the properties of tin oxide films

Dmitriyeva¹,

Lebedev²,

Grushevskaya³

et al. 2020

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Research devoted to the effect of three-minute exposure of oxygen plasma on the properties of tin oxide films investigation. The films were obtained by sol-gel method from five-water tin tetrachloride solution. The concentration of tin ions in the SnCl4/EtOH film-forming system was 0.14 mol/l. The solution system was deposed on the glass substrate by carring out a modified dipping method. Plasma treatment was performed at a pressure of 6.5 Pa and a power of about 20 Watts. The frequency of the oscillations produced by the generator was 27.12 ± 0.6 % MHz as well. The temperature of the samples during processing did not exceed 100 ºC. As a result of the formation of tin oxide (II), the film transmittance decreased after treatment with oxygen plasma. The width of the electric forbidden zone of the obtained samples was calculated, which was 3.95 eV for glass and 3.79 eV for film. The resistance of the films was determined by 10 measurements on different parts of the samples. The film without processing has a resistance of about 4255 ± 1158 kΩ, after processing, the resistance decreased by 25 times and amounted to 167 ± 26 kΩ. A decrease in resistance indicates an increase in the concentration of charge carriers in the sample. The resulting SnO is a semiconductor that lowers the transmittance of the studied films and contributes to reducing their resistance. X-ray structural analysis of the samples was also performed. After processing in oxygen plasma, the intensity of reflection from the (110) plane have increased. It should be noted that the number of planes with (101) indexes has decreased. The study of the sample surface showed the destructive nature of three-minute exposure by oxygen plasma. Keywords: thin films, SnO2, sol-gel method, oxygen plasma treatment, transparency, structure, resist

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Ar/O2 and H2O plasma surface modification of SnO2 nanomaterials to increase surface oxidation

Cited by 34 publications

References 45 publications

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Employing Optical Emission Spectroscopy to Elucidate the Impact of Titanium Dioxide in Plasma-Assisted Catalysis

The effect of three-minute exposure of oxygen plasma on the properties of tin oxide films

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