Ar+ laser induced chemical vapor deposition of Si from SiH4

Abstract

For the first time polycrystalline silicon has been grown by using the visible light of an Ar+ laser for pyrolytical decomposition of SiH4. With a laser irradiance of 3600 W/mm2 a deposition rate of 30 μm/s was obtained. The temperature dependence of the deposition rate was investigated. The kinetically controlled regime is characterized by an activation energy of 44±4 kcal/mole.

Laser Pyrolysis of CH3Br

“…The standard enthalpy change for reaction [4] was -468 kJ based on the standard enthalpy of formation of CH4 -74.7kJ/mol. la For Reaction [1][2][3][4][5] the standard enthalpy change was about -858 kJ. Both Reactions [4] and [5] were exothermic.…”

“…la For Reaction [1][2][3][4][5] the standard enthalpy change was about -858 kJ. Both Reactions [4] and [5] were exothermic.…”

“…The deposition of Si from Sill4 was studied by Bauerle, Irsigler, Leyendecker, Noll and Wanger in 1982. 5 Fine needle and very narrow thin film of polycrystalline Si deposited. The deposition of Ni spots by laser pyrolysis was also reported.…”

Laser-assisted deposition of thin films from gas-phase and surface-adsorbed molecules

“…Direct laser writing of micron-dimension structures of polycrystalline and crystalline silicon by localized laser chemical vapor deposition of silane has been investigated by several groups. 24,136,[177][178][179][180][181][182][183][184][185][186][187][188][189] In most of these experiments, a visible line of the argon ion laser (such as 514.5 nm) is transmitted through the nonabsorbing silane gas and is focused onto an absorbing substrate.…”

On Demand Shape-Selective Integration of Individual Vertical Germanium Nanowires on a Si(111) Substrate via Laser-Localized Heating

“…In chemical vapor deposition (CVD) processes, a focused laser beam has been utilized to achieve site-selective growth of semiconductor materials since the respective kinetics follow an Arrhenius behavior. , Specifically, spatially confined and temporally modulated continuous wave (CW) laser irradiation can impose a short heating and cooling time scale and hence sufficient precision for controlling the localized growth time and temperature . By taking advantage of the laser-induced local heating, on-demand growth of Si and/or Ge NWs based on the VLS mechanism has been demonstrated in our previous studies. , Moreover, since the growth temperature is a decisive factor in determining the facet and taper evolution and therefore the NW geometric shape, , focused laser irradiation can achieve direct integration of individually tailored NWs.…”