Ar ion implantation into resist for etching resistance improvement

Yamaguchi, Atsumi; Nakae, Aya; Tsujita, Kouichirou

doi:10.1117/12.436899

Cited by 12 publications

(10 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Further, a 157-nm (F 2 ) photoresist shows a higher etching rate because of high fluorine content [23]. In order to improve the etching durability, various techniques such as thermal, electron beam, ultraviolet (UV), ion implantation, and plasma curing have been investigated [9,10,[24][25][26].…”

Section: Discussionmentioning

confidence: 99%

“…Further, PGMEA treatment was applied after the plasma treatment to highlight the modified layer of the photoresist. The resist materials dissolve in PGMEA, but the modified layer of the photoresist does not dissolve [10].…”

Section: Methodsmentioning

confidence: 99%

“…PGMEA dissolves the 193-nm photoresist but not the modified layer. This treatment highlights the modified layer and it reveals the thickness of the layer modified by plasma irradiations [10]. Fig.…”

Section: Effects Of H 2 Plasma Treatment On Photoresist Deformationmentioning

confidence: 98%

See 2 more Smart Citations

Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasma in via-hole etching

et al. 2007

View full text Add to dashboard Cite

Section: Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasma in via-hole etching

et al. 2007

View full text Add to dashboard Cite

“…Figure 12 shows a comparison of the lithographic performance of an EUV hybrid resist in ''no-bake'', hot-plate PB, and FL PB processes. Aside from this, there are also reports on the use of electron beam (EB) curing, 130) ion implantation, 131,132) and plasma treatment, 133) which have shown an observable decrease in LWR through surface smoothing. Each of these processes has shown smoothening effects for specific roughness frequencies.…”

Section: Post-process Technologiesmentioning

confidence: 99%

Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

161

153

View full text Add to dashboard Cite

Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography. The development of EUV lithography has been pursued on a worldwide scale. Over the past decade, the development of EUV lithography has significantly progressed and approached its realization. In this paper, the resist materials and processes among the key technologies of EUV lithography are reviewed. Owing to its intensive development, the resist technology has already closely approached the requirements for the 22 nm node. The focus of the development has shifted to the 16 nm node and beyond. Despite the trade-off relationships among resolution, line edge roughness/line width roughness, and sensitivity, the capability of resist technology will go beyond the 16 nm node.

show abstract

“…It is well known that the ArF photoresist suffers from the SEM shrinkage and insufficient etching resistance. Also, several papers have reported ion implantation characteristics of the photoresist(PR) patterns [1][2][3]. However, these papers concentrate on the other applications using ion implantation as the pre-processing technology [4][5][6].…”

Section: Introductionmentioning

confidence: 99%