Aqueous spray pyrolysis of CuInSe2 thin films: Study of different indium salts in precursor solution on physical and electrical properties of sprayed thin films

Z‐scheme CuSbS2/ZnO Heterojunction for Enhanced Photocatalytic Degradation of RhB

“…The Mott‐Schottky plots were used to study the flat band potentials of pure CAS and ZnO (as shown in Figure 8a and b). The results reveal the flat band potentials of are −0.12 eV and 0.85 eV of ZnO and CAS, respectively, and a positive slope of ZnO, confirmed to be an n‐type semiconductor [37] , and a negative slope of CAS, identified as a p‐type semiconductor [38] . Usually, the E CB of an n‐type semiconductor is 0.1–0.3 V lower than the flat band potential and the E VB of p‐type semiconductor is 0.1–0.3 V higher than the flat band potential [39] .…”

Morphological evolution of individual microrods to self-assembled 3D hierarchical flower architectures of CuBixIn1−xSe2 for photo response applications

“…Such increment in resistance might be due to impurities, which cause trap states, increase recombination and reduce mobility. 78…”

Effect of In-Incorporation and Annealing on CuxSe Thin Films

“…It shows the energy of the light hν versus absorption quantity ( αhν ) n , where α is the absorption coefficient of the studied film material. In order to calculate the energy bandgap ( E g ) of the obtained films the Tauc plot was used [ 32 , 33 , 34 ]: where A is the parameter that depends on transition chance and n is the value that depends on transition type. The number n = 2 denotes direct band gap transition and n = ½ denotes indirect band gap transition.…”

“…It shows the energy of the light hν versus absorption quantity (αhν) n , where α is the absorption coefficient of the studied film material. In order to calculate the energy bandgap (E g ) of the obtained films the Tauc plot was used [32][33][34]:…”