Aquabolt-XL HBM2-PIM, LPDDR5-PIM With In-Memory Processing, and AXDIMM With Acceleration Buffer

Kim, Jin Hyun; Kang, Shin-haeng; Lee, Sukhan; Kim, Hyeonsu; Ro, Yuhwan; Lee, Seungwon; Wang, David; Choi, Joo-Ho; So, Jinin; Cho, Yeongon; Song, Joonho; Cho, Jeonghyeon; Sohn, Kiwon; Kim, Nam Sung

doi:10.1109/mm.2022.3164651

Cited by 15 publications

(1 citation statement)

References 6 publications

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“…The semiconductor industry is expanding toward artificial intelligence (AI), cloud data centers, and high-bandwidth memory processing in memory (HBM-PIM). , The design of high-performance field-effect transistors (FETs) with low-voltage operation, high field-effect mobility (μ FE ), and low leakage current has propelled the development of relevant fields. Oxide-based thin-film transistors (TFTs) are garnering increased attention owing to their steep subthreshold swing (SS) and extremely low leakage current. , Although oxide-based TFTs are known to restrict μ FE (∼30 cm 2 /(V s)), numerous research groups have demonstrated exceptional μ FE values exceeding 100 cm 2 /(V s). , …”

Section: Introductionmentioning

confidence: 99%

Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability

Kim

Choi

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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Achieving high mobility and reliability in atomic layer deposition (ALD)-based IGZO thin-film transistors (TFTs) with an amorphous phase is vital for practical applications in relevant fields. Here, we suggest a method to effectively increase stability while maintaining high mobility by employing the selective application of nitrous oxide plasma reactant during plasma-enhanced ALD (PEALD) at 200 °C process temperature. The nitrogen-doping mechanism is highly dependent on the intrinsic carbon impurities or nature of each cation, as demonstrated by a combination of theoretical and experimental research. The Ga2O3 subgap states are especially dependent on plasma reactants. Based on these insights, we can obtain high-performance indium-rich PEALD-IGZO TFTs (threshold voltage: −0.47 V; field-effect mobility: 106.5 cm2/(V s); subthreshold swing: 113.5 mV/decade; hysteresis: 0.05 V). In addition, the device shows minimal threshold voltage shifts of +0.45 and −0.10 V under harsh positive/negative bias temperature stress environments (field stress: ±2 MV/cm; temperature stress: 95 °C) after 10000 s.

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