Approximation of three dimensional mask effects with two dimensional features

Bai, Min; Melvin, Lawrence S.; Yan, Qiliang; Shiely, James P.; Falch, Bradley J.; Fu, Changlin; Wang, Ruoping

doi:10.1117/12.600547

Cited by 15 publications

(7 citation statements)

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“…2). In the previous work, it is also suggested that this simplified symmetric boundary can be applied even with linearly polarized illumination on a certain circumstance [9][10][11]. For example, linear polarization is useful to very long lines patterns which are often found in memory device.…”

Section: Introductionmentioning

confidence: 93%

“…However, such solving of Maxwell equations is extremely time-consuming and is not a practical solution for full-chip OPC which requires very fast image calculation. Therefore, there are several approximations for OPC instead of the rigorous 3D mask simulations for the full chip OPC [5][6][7][8][9][10][11][12]. These methods basically use approximated near-field image of mask.…”

Section: Introductionmentioning

confidence: 98%

“…These methods basically use approximated near-field image of mask. One of the promising methods is Boundary Layer Model (BLM) [6][7][8][9][10][11]. In BLM, 3D mask effect is represented by hypothetical boundary layers around an original main feature.…”

Section: Introductionmentioning

confidence: 99%

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OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect

Kim

Park

et al. 2007

SPIE Proceedings

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Boundary Layer Model (BLM) is applied to OPC for typical memory-device patterning processes for 3D mask topographic effect. It is observed that this BLM successfully accounts for the 3D mask effect as reducing OPC model error down to sub-50 nm node. BLM improves OPC-modeling accuracy depending on specific process conditions such as mask type and pattern geometry. Potential limit of BLM, i.e., how accurately BLM could predict the 3D mask effect is also investigated with respect to CD change: BLM also compared with rigorous simulation for various features and a good match is obtained as small as below 0.5 nm. Some practical issue in OPC modeling such as determination of the phase of boundary layer is addressed, which can be critical for prediction of defocus behavior.

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Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 98%

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OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect

Kim

Park

et al. 2007

SPIE Proceedings

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“…This transmission loss of a π -shifter can be modeled with frame with a certain width and a reduced transmission. Accurate model fitting can be achieved with that method [4,5].…”

Section: Opc and Modelingmentioning

confidence: 99%

An efficient resolution enhancement technique flow for 65nm logic poly layer

2005

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For the manufacturing of 65nm technology devices, many exposure techniques that have been used in previous technology nodes cannot offer enough process window anymore. Alternating Aperture Phase Shift Mask (Alt-PSM) is one of the few remaining technologies that still offer enough resolution to enable 65nm production.While setting up a 65nm Alt-PSM based resolution enhancement technique (RET) flow many of the mask manufacturability challenges need to be considered and addressed. At the same time OPC complexity is one of the main factors for increased data volume and high mask costs. In this work, logic and embedded memory cells are designed, and based on the specific geometries a manufacturable RET flow is developed. Data complexity reduction and lower mask cost are the primary motives in setting up this RET flow.

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“…The boundary layer method adds transmission bands to the layout to accounts for the transient region across differrent tones. The user can optimize the widths, transmission and phase shifts of the added bands to match the 3D mask effect 1,5,8 . The boundary layer method does not come without a limit, though.…”

Section: Introductionmentioning

confidence: 99%

Assist features for modeling three-dimensional mask effects in optical proximity correction

et al. 2007

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Liberal use of assist features of both tones is an important component of the 45nm lithography strategy for many layers. These features are often sized at λ/4 on the mask or smaller. Under these conditions, formerly successful approximations of the mask near field using boundary layer methods or domain decomposition methods break down. Rigorous simulations of the mask near field must include a three-dimensional (3D) Maxwell's equation analysis, but these computations are cost-prohibitive for full-chip OPC, RET, and lithographic compliance checking applications.The purpose of this paper is to describe a simple and computationally efficient method that can improve model fidelity for 45nm assist features of either tone,while still retaining computational simplicity. While the model lacks the generality of a rigorous solution of Maxwell'sequations, it can be well-anchored to the real physics by calibrating its performance to a lithographic TCAD mask simulator. The approach provides a balanced tradeoff between speed and accuracy that makes it a superior approach to boundary layer and domain decomposition methods, while retaining the capability to realistically be deployed on a full-chip lithography simulation.

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Approximation of three dimensional mask effects with two dimensional features

Cited by 15 publications

References 0 publications

OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect

OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect

An efficient resolution enhancement technique flow for 65nm logic poly layer

Assist features for modeling three-dimensional mask effects in optical proximity correction

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