Approximate model of a DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide

Tyszka-Zawadzka, Anna; Szczepanski, Pawel; Karpierz, Mirosław A.; Mossakowska-Wyszyńska, Agnieszka; Bugaj, Marcin

doi:10.1117/12.922429

Cited by 3 publications

(4 citation statements)

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“…In comparison to the equations presented in our previous work [14], they include additionally the term resulting from the pump-Stokes TPA process. (The Stokes-Stokes TPA process is ignored here because the Stokes is in general a weak signal).…”

Section: Energy Theoremmentioning

confidence: 99%

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Light generation of DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide

et al. 2013

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This paper describes an approximate analysis of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator and an integrated p-i-n (PIN) junction, taking into account spatial field distribution and nonlinear effects involved in silicon. These effects comprise especially, stimulated Raman scattering (SRS), free-carrier absorption (FCA), degenerate two-photon absorption (i.e. the pump-pump TPA) and non-degenerate two-photon absorption (i.e. the pump-Stokes TPA and the Stokes-pump TPA). Applying the reverse biased PIN junction allows to reduce the nonlinear optical losses due to TPA-induced FCA. The model is based on the semiclassical approach and an energy theorem. In threshold analysis of steady-state Raman laser operation, an analytical formula relating input pump power to the system parameters is obtained. It allows analyzing the influence of all physical and geometrical parameters on the threshold pump power. The analysis of the above threshold operation is based on the exact energy conservation relation, in which the approximated pump and Stokes field distributions are used. The Stokes field distributions are approximated by that existing at the threshold, whereas the approximate pump field distributions are obtained by integrating the equations for the pump signal using the linear (threshold) pump field distributions and the threshold Stokes field distributions. We obtain an approximate, semi-analytical expression related the Raman output power to the pump power and system parameters.

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Section: Energy Theoremmentioning

confidence: 99%

“…The effect of TPA-induced absorption dependent on the incident optical intensity, which was not included in our previous calculations [14], is a detrimental phenomenon that reduces the efficiency of nonlinear silicon photonic devices [12]. Throughout this paper a threshold lasing as well as the above threshold operation are considered.…”

Section: Introductionmentioning

confidence: 98%

Light generation of DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide

et al. 2013

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“…(10a) and the linear field distri− butions (14) and (15) Eqs. (14) and (15) (so called "trial functions"), into the Eqs.…”

Section: Threshold Operationmentioning

confidence: 99%

“…Recently, we developed an approximate analysis of DBR/F−P laser based on Raman effect in a SOI rib wave− guide [14]. In our semi−analytical model, we especially took into account Raman amplification as well as the linear effects related to the FCA and linear distributed losses in the laser cavity.…”

Section: Introductionmentioning

confidence: 99%

Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBR/F-P resonator

Tyszka-Zawadzka

Szczepanski

Mossakowska-Wyszyńska

et al. 2013

Opto-Electronics Review

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An approximate method of modelling of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator including spatial field distribution and nonlinear effects such as Raman amplification and two photon absorption (TPA), is developed. In threshold analysis of steady-state Raman laser operation, an analytical formula relating threshold pump power to the system parameters is obtained. The analysis of the above threshold operation is based on an energy theorem. In exact energy conservation relation, we approximate the Stokes field distributions by that existing at the threshold, whereas the approximate pump field distributions are obtained by integrating the equations for the pump signal using the linear (threshold) pump field distributions and the threshold Stokes field distributions. An approximate, semi-analytical expression related the Raman output power to the pump power and system parameters is derived. Our calculations remain in a good agreement with the exact numerical solutions.

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Analysis and Design of a High Transmittivity and Narrowband Tunable Lithium Niobate Filter With Double FP Cavities

Qiao

Zhang

Bai

2023

IEEE J. Quantum Electron.

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Approximate model of a DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide

Cited by 3 publications

References 1 publication

Light generation of DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide

Light generation of DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide

Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBR/F-P resonator

Analysis and Design of a High Transmittivity and Narrowband Tunable Lithium Niobate Filter With Double FP Cavities

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