Approaching Topological Insulating States Leads to High Thermoelectric Performance in n-Type PbTe

Xiao, Yu; Wang, Dongyang; Qin, Bingchao; Wang, Jinfeng; Wang, Guangtao; Zhao, Li‐Dong

doi:10.1021/jacs.8b09029

“…Moreover, the measured n‐type carrier concentrations (negative Hall coefficient) are approximately 2.65×10 19 cm −3 along SPS ∥ and 2.95×10 19 cm −3 along SPS ⊥ , showing little difference . Interestingly, BiTe possesses notably high carrier mobility of approximately 516 cm 2 V −1 s −1 along SPS ∥ and 707 cm 2 V −1 s −1 along SPS ⊥ , mainly originating from the metallic surface states of the dual topological insulator . Such high carrier mobility of BiTe mainly contributes to the high electrical conductivity of the system.…”

Section: Resultsmentioning

confidence: 99%

“…,mainly originating from the metallic surface states of the dual topological insulator. [24,25,32,[38][39][40][41] Such high carrier mobility of BiTemainly contributes to the high electrical conductivity of the system. Mention must be made that the carrier mobility of BiTei s significantly higher than that of BiSe (ca.…”

Section: Resultsmentioning

confidence: 99%

Intrinsically Low Thermal Conductivity and High Carrier Mobility in Dual Topological Quantum Material, n‐Type BiTe

Samanta

¹

,

Pal

²

,

Waghmare

³

et al. 2020

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A challenge in thermoelectrics is to achieve intrinsically low thermal conductivity in crystalline solids while maintaining a high carrier mobility (μ). Topological quantum materials, such as the topological insulator (TI) or topological crystalline insulator (TCI) can exhibit high μ. Weak topological insulators (WTI) are of interest because of their layered hetero‐structural nature which has a low lattice thermal conductivity (κlat). BiTe, a unique member of the (Bi2)m(Bi2Te3)n homologous series (m:n=1:2), has both the quantum states, TCI and WTI, which is distinct from the conventional strong TI, Bi2Te3 (where m:n=0:1). Herein, we report intrinsically low κlat of 0.47–0.8 W m−1 K−1 in the 300–650 K range in BiTe resulting from low energy optical phonon branches which originate primarily from the localized vibrations of Bi bilayer. It has high μ≈516 cm2 V−1 s−1 and 707 cm2 V−1 s−1 along parallel and perpendicular to the spark plasma sintering (SPS) directions, respectively, at room temperature.

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“…Moreover, the measured n‐type carrier concentrations (negative Hall coefficient) are approximately 2.65×10 19 cm −3 along SPS ∥ and 2.95×10 19 cm −3 along SPS ⊥ , showing little difference . Interestingly, BiTe possesses notably high carrier mobility of approximately 516 cm 2 V −1 s −1 along SPS ∥ and 707 cm 2 V −1 s −1 along SPS ⊥ , mainly originating from the metallic surface states of the dual topological insulator . Such high carrier mobility of BiTe mainly contributes to the high electrical conductivity of the system.…”

Section: Resultsmentioning

confidence: 99%

Intrinsically Low Thermal Conductivity and High Carrier Mobility in Dual Topological Quantum Material, n‐Type BiTe

Samanta

¹

,

Pal

²

,

Waghmare

³

et al. 2020

View full text Add to dashboard Cite

A challenge in thermoelectrics is to achieve intrinsically low thermal conductivity in crystalline solids while maintaining a high carrier mobility (μ). Topological quantum materials, such as the topological insulator (TI) or topological crystalline insulator (TCI) can exhibit high μ. Weak topological insulators (WTI) are of interest because of their layered hetero‐structural nature which has a low lattice thermal conductivity (κlat). BiTe, a unique member of the (Bi2)m(Bi2Te3)n homologous series (m:n=1:2), has both the quantum states, TCI and WTI, which is distinct from the conventional strong TI, Bi2Te3 (where m:n=0:1). Herein, we report intrinsically low κlat of 0.47–0.8 W m−1 K−1 in the 300–650 K range in BiTe resulting from low energy optical phonon branches which originate primarily from the localized vibrations of Bi bilayer. It has high μ≈516 cm2 V−1 s−1 and 707 cm2 V−1 s−1 along parallel and perpendicular to the spark plasma sintering (SPS) directions, respectively, at room temperature.

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“…All the samples synthesized in this work are based on n‐type PbTe with antimony (Sb) doping to preliminarily tune carrier density (Pb 0.985 Sb 0.015 Te). [ 18,21 ] To realize dynamically optimized carrier density in n‐type PbTe in the whole temperature range, we conduct In doping in Pb 0.985 Sb 0.015 Te. As shown in Figure S1, Supporting Information, the powder X‐ray diffraction (PXRD) patterns of In‐doped Pb 0.985 Sb 0.015 Te still present the cubic crystal structure and no extra peaks are observed.…”

Section: Resultsmentioning

confidence: 90%

“…All the samples synthesized in this work are based on n-type PbTe with antimony (Sb) doping to preliminarily tune carrier density (Pb 0.985 Sb 0.015 Te). [18,21] To realize dynamically optimized carrier density in n-type PbTe in the whole temperature range, we conduct In doping in Pb 0.985 Sb 0.015 Te. As shown in Figure S1 For further research on the origin of improved electrical transport property in Pb 0.985-x In x Sb 0.015 Te (x = 0-0.0125), Hall measurement is utilized to evaluate carrier density and mobility.…”

Section: Dynamically Optimizing Carrier Density In N-type Pbte With Imentioning

confidence: 99%

Synergistically Enhancing Thermoelectric Performance of n‐Type PbTe with Indium Doping and Sulfur Alloying

Wang

¹

,

Qin

²

,

Wang

³

et al. 2019

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To achieve high-performance n-type PbTe-based thermoelectric materials, this work provides a synergetic strategy to improve electrical transport property with indium (In) element doping and reduces thermal conductivity with sulfur (S) element alloying. In n-type PbTe, In doping can tune the carrier density in the whole working temperature range, causing the carrier density to increase from 2.18 × 10 19 cm −3 at 300 K to 4.84 × 10 19 cm −3 at 823 K in Pb 0.98 In 0.005 Sb 0.015 Te. The optimized carrier density can further modulate electrical conductivity and Seebeck coefficient, finally contributing to a substantial increase of power factor, and a maximum power factor increase from 19.7 µW cm −1 K −2 in Pb 0.985 Sb 0.015 Te to 28.2 µW cm −1 K −2 in Pb 0.9775 In 0.0075 Sb 0.015 Te. Based on the optimally In-doped PbTe, S alloying is introduced to suppress phonon propagation by forming a complete solid solution, which could effectively reduce lattice thermal conductivity and simultaneously benefit carrier mobility to maintain high power factor. With S alloying, the minimum lattice thermal conductivity decreases from 0.76 Wm −1 K −1 in Pb 0.985 Sb 0.015 Te to 0.42 Wm −1 K −1 in Pb 0.98 In 0.005 Sb 0.015 Te 0.88 S 0.12. Combining the advantages of both In doping and S alloying, the peak ZT value and averaged ZT (ZT ave) (300-873 K) are boosted from 1.0 and 0.60 in Pb 0.985 Sb 0.015 Te to 1.4 and 0.87 in Pb 0.98 In 0.005 Sb 0.015 Te 0.94 S 0.06 .

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Approaching Topological Insulating States Leads to High Thermoelectric Performance in n-Type PbTe

Cited by 88 publications

References 48 publications

Intrinsically Low Thermal Conductivity and High Carrier Mobility in Dual Topological Quantum Material, n‐Type BiTe

Intrinsically Low Thermal Conductivity and High Carrier Mobility in Dual Topological Quantum Material, n‐Type BiTe

Intrinsically Low Thermal Conductivity and High Carrier Mobility in Dual Topological Quantum Material, n‐Type BiTe

Synergistically Enhancing Thermoelectric Performance of n‐Type PbTe with Indium Doping and Sulfur Alloying

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