Applying the selective Cu electroplating technique to light-emitting diodes

Hsu, Shih-Chieh; Chen, Lo-Lin; Lin, Cheng-Lan; Lin, Dar‐Jong

doi:10.1007/s11164-014-1611-z

Cited by 2 publications

(4 citation statements)

References 9 publications

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“…We can also observe in Fig. 5 that the sidewall of the a-plane (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) should only be formed by etching the inclined plane of the a-plane (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) first.…”

Section: Resultsmentioning

confidence: 77%

“…Overall, we propose a complete and reasonable mechanism for the etching behavior of the whole KOH etching on GaN, and the experimental result is consistent with our theory. 5 The diagram of the shrinkage motion for (10-1-1) and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) The study of wet etching on GaN surface by potassium……”

Section: Resultsmentioning

confidence: 99%

“…In order to promote the performance of the LED, the novel vertical-type structure with substrate substitution technology is demonstrated to improve internal quantum efficiency (IQE) and external quantum efficiency (EQE) of the LED. Therefore, the sapphire substrate is removed and the GaN epilayer can be transferred onto another substrate that has higher heat dissipation and electrical conductivity [11,12]. Thus far, the sapphire substrate can be removed by two methods: laser lift-off (LLO) and chemical lift-off (CLO).…”

Section: Introductionmentioning

confidence: 99%

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The study of wet etching on GaN surface by potassium hydroxide solution

et al. 2016

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Potassium hydroxide solution was used to etch un-doped GaN grown on the sapphire substrate at 180 and 260°C. We illustrated the etching phenomenon in detail and probed its mechanism in the wet etching process. By multiplying the planar density and the number of dangling bonds on the N atom, we proposed the etching barrier index (EBI) to describe the difficulty degree of each lattice facet. The raking of EBI will be ?cCombining the EBI with SEM results, we thoroughly studied the whole etching process. We confirmed that in our research, KOH wet etching on GaN starts from the r-plane instead of the ?c-plane or -c-plane, which differs from other studies. We also found that during the high-temperature etching process, there are two etching approaches. In one, the etching begins vertically from the top to the bottom, then horizontally, and finally reversely from the bottom to the top. In the other, etching pits will develop into a hexagonal hole of the sidewall of m-plane.

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Section: Resultsmentioning

confidence: 77%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The study of wet etching on GaN surface by potassium hydroxide solution

et al. 2016

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“…And Mn 2+ emission band is sensitive to the coordination field environment, which implies that Mn 2+ center can be regulated to obtain emission in a wide spectral range. [5][6][7][8][9][10] The doping of Mn 2+ centers is beneficial to improve the color render index [11][12][13][14] and replace low-abundance rare-earth ions. [15][16][17][18][19][20][21][22][23][24] In previous research, Mn 2+ ions exhibit a 3d 5 electronic configuration and generate photoluminescence (PL) due to 4 T 1 (G)→ 6 A 1 (S) transition.…”

Section: Introductionmentioning

confidence: 99%

White‐light emission and red scintillation from Mn²⁺ ions single‐doped aluminum‐silicate glasses

Hua

Tang

Wei

et al. 2023

Int J of Appl Glass Sci

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A series of Mn2+ single‐doped 0.2Gd2O3‐0.2Al2O3‐0.6SiO2 (GAS: xMn2+) glasses with Si3N4 as reducing agent were prepared. The presence of [SiO4‐x] defects and Mn2+ ions was determined from the absorption and excitation spectra of the glasses. With the increase of Mn2+ concentration, the intensity of blue emission decreases, while the intensity of red emission increases. The color coordinate of GAS: 6Mn2+ glass is (0.264, 0.226). The lifetime of the glasses was tested. Under the monitoring of 440 nm, the fast components (τf) are between 17 and 85 μs, and the slow components (τs) are between 200–650 μs. The former belongs to [SiO4‐x] defects, and the latter is [4E(G), 4A1(G)]→6A1(S) transition of Mn2+ ions. Under the monitoring at 630 nm, the τf are between 110 and 300 μs, and the τs are between 680 and 1220 μs, which are due to 4T1(G)→6A1(S) transition of Mn2+ ions and Mn2+ pairs, respectively. The energy transfer mechanism of [SiO4‐x] defect→Mn2+ ions are explained. The efficient [SiO4‐x] defect →Mn2+ ions energy transfer process was demonstrated by time‐resolved photoluminescence, and the energy transfer efficiency is over 85%. The maximum photoluminescence quantum yield (PL QY) of the glasses can reach 15.87%. The thermal activation energy of the glasses was calculated. In addition, X‐ray excited red luminescence spectra and the mechanism of the glasses were investigated.

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Applying the selective Cu electroplating technique to light-emitting diodes

Cited by 2 publications

References 9 publications

The study of wet etching on GaN surface by potassium hydroxide solution

The study of wet etching on GaN surface by potassium hydroxide solution

White‐light emission and red scintillation from Mn²⁺ ions single‐doped aluminum‐silicate glasses

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Applying the selective Cu electroplating technique to light-emitting diodes

Cited by 2 publications

References 9 publications

The study of wet etching on GaN surface by potassium hydroxide solution

The study of wet etching on GaN surface by potassium hydroxide solution

White‐light emission and red scintillation from Mn2+ ions single‐doped aluminum‐silicate glasses

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White‐light emission and red scintillation from Mn²⁺ ions single‐doped aluminum‐silicate glasses