1986
DOI: 10.1002/sia.740090504
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Applications of SIMS, SAES and XPS to problems in the semiconductor industry

Abstract: Electronic devices based on 111-V compounds can be significantly affected in their behaviour by surface and interface properties. This paper will show the usefulness of surface and interface analytical tools such as SIMS, SAES and XPS in overcoming such problems. Case studies in relation with some of the main problems of 111-V compounds technologies will be described.

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Cited by 11 publications
(1 citation statement)
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“…During this process, material is sputtered away and secondary ion species are generated, analyzed in a mass analyzer, and detected as a mass spectrum for each pixel in an image. With a detection limit in the parts per million or even parts per billion range and its high mass- and spatial-resolution capabilities, the SIMS technique is highly applicable for analysis of different materials such as semiconductors, 20 geological and cosmological samples, 21 metals, 22 and biological samples. 23 25 In a previous study, we showed the potential of time-of-flight SIMS (ToF-SIMS) to visualize and relatively quantify iron accumulation in human lung tissue sections.…”
Section: Introductionmentioning
confidence: 99%
“…During this process, material is sputtered away and secondary ion species are generated, analyzed in a mass analyzer, and detected as a mass spectrum for each pixel in an image. With a detection limit in the parts per million or even parts per billion range and its high mass- and spatial-resolution capabilities, the SIMS technique is highly applicable for analysis of different materials such as semiconductors, 20 geological and cosmological samples, 21 metals, 22 and biological samples. 23 25 In a previous study, we showed the potential of time-of-flight SIMS (ToF-SIMS) to visualize and relatively quantify iron accumulation in human lung tissue sections.…”
Section: Introductionmentioning
confidence: 99%