Applications of resonant-tunneling diodes to high-speed digital ICs

Abstract

Ultrahigh-speed circuit applications of resonant-tunneling diodes (RTDs) have been developed. The key points are the utilization of the edge-triggered and latching properties arising from negative differential resistance of the RTD, and the combination of RTDs and high electron mobility transistors (HEMTs). High-speed and low power operation of various flip-flop (FF) circuits monolithically integrating InP-based RTDs and HEMTs have been demonstrated at room temperature, including a delayed flip-flop operation at 35 Gbith. By extending the concept of electronic-input circuits to the optical-input circuit, an ultrahigh-speed optoelectronic circuit integrating RTDs and a photodiode has been developed. Using this optoelectronic circuit, we have succeeded in demultiplexing a 80 Gbitls optical signal into a 40 Gbitls electrical signal. These results show the potentiality of RTD-based circuits for ultrahigh-speed communications and signal processing circuits.

High‐power broadband graphene non‐Foster circuit enabled class‐J GaN HEMT power amplifier

“…Resonant tunneling diode (RTD) is a form of tunneling diode that finds applications in electronic and communication circuits where there is desirability to enhance switching speed . The basic theory, operation and applications of RTD can be found in .…”

“…Resonant tunneling diode (RTD) is a form of tunneling diode that finds applications in electronic and communication circuits where there is desirability to enhance switching speed . The basic theory, operation and applications of RTD can be found in . The energy band diagram of RTD showing movement of electrons as well as the conduction band (E c ), valence band (E b ), and Fermi level (E f ) in the n and p regions is shown in Figure…”

“…The basic theory, operation and applications of RTD can be found in . The energy band diagram of RTD showing movement of electrons as well as the conduction band (E c ), valence band (E b ), and Fermi level (E f ) in the n and p regions is shown in Figure…”

A Spice Behavioral Model of Tunnel Diode: Simulation and Application

“…Following Esaki's discovery, tunnel diodes have received interest because of their remarkable multivalued I-V characteristic and inherent high switching speeds. They have been used in circuits such as amplifiers [1], oscillators, pulse generators, and analog-to-digital converters (ADCs) [2]. More recently it has been shown that incorporating tunnel diodes (Esaki diodes or resonant tunneling diodes (RTDs)) with transistors can improve circuit performance, by increasing the speed of signal processing circuitry or decreasing power consumption at the same speed.…”

A XOR Threshold Logic Implementation Through Resonant Tunneling Diode

“…The Terahertz range is the RTD maximum operating frequency and offers a wide range of applications, in analog-digital converter (ADC), frequency divider or multiplier, oscillator [4]) as well as digital ("multi-value" logic [5] [6]) circuits. Its I-V characteristic presents an unusual negative differential resistance (NDR) [7].…”