Applications of nanparticle based drug delivery systems in bone tissue engineering

Studying the Effect of Different Etching Parameters on the Physical Properties of Porous Silicon Prepared By Electrochemical Etching

“…This behavior described by the differences in their energy band-gap, which has been described by quantum confinement effect (QCE), as it is an important to explain the increasment of resistivity for PS/c-Si heterostructure.In result, the output current vary as the structure size change [22]. Table (3) shows the saturation current density (J S ) which has been determined from the loglinear region of the current density to zero voltage, the ideality factor (η) and barrier height (Φ ). The high value of the obtained ideality factor, which is higher than for an ideal diode, can be explained by the formation of high density of states at the interface between c-Si and PS which acts as recombination centers in the PS layer [23].…”

“…PS represents as a Nanostructure Silicon (Si) that has larger band-gap with respect to the crystalline Silicon (c-Si) which appears as sponge-like structure with pores separated by Nano-sized walls [2]. Depending on the pore sizes, the PS can be divided into three types: Micro-porous, 1389 Meso-porous and Macro-porous with sizes less < 2, 2 -50 and > 50 nm respectively [3]. The most parameters that affect the porosity, etching rate, and electro-polishing threshold (or critical current) are etching current density, etching time, and Hydrofluoric (HF) acid.…”