2002
DOI: 10.1016/s0022-0728(02)01141-5
|View full text |Cite
|
Sign up to set email alerts
|

Applications of microwave reflectance methods to the study of p-Si in fluoride solutions

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
9
0

Year Published

2003
2003
2023
2023

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 11 publications
(9 citation statements)
references
References 34 publications
0
9
0
Order By: Relevance
“…technique, have been applied to the characterization of many different semiconductor materials, [5][6][7] as well as in the study of electrochemical [8][9][10][11][12][13][14][15] and solid state junctions. 16 More recently, TRMC has been employed to investigate organic photovoltaic systems 17 and mesoporous films of TiO 2 (bare and sensitized) in the absence of electrolyte and conducting substrate.…”
Section: Microwave Reflectance Methods Including the Time-resolved Mmentioning
confidence: 99%
See 2 more Smart Citations
“…technique, have been applied to the characterization of many different semiconductor materials, [5][6][7] as well as in the study of electrochemical [8][9][10][11][12][13][14][15] and solid state junctions. 16 More recently, TRMC has been employed to investigate organic photovoltaic systems 17 and mesoporous films of TiO 2 (bare and sensitized) in the absence of electrolyte and conducting substrate.…”
Section: Microwave Reflectance Methods Including the Time-resolved Mmentioning
confidence: 99%
“…We have demonstrated the utility of the dielectric stack approach previously in microwave reflectance studies of the silicon/electrolyte interface. 11,13,14 The reflectance is calculated using values of the relative permittivity of the TiO 2 layer corresponding to dark and illuminated conditions (the permittivity values for the other components of the cell are given in Table 1 Table 1 for permittivity values and Supporting Information for further details. The calculated reflectance change is negative for the stack configuration used.…”
Section: Reflectance Calculationsmentioning
confidence: 99%
See 1 more Smart Citation
“…The combination of photocurrent and M w allows, for instance, the separate assessment of the charge transfer and surface recombination rate. This can be used to analyze the photoelectrochemical behavior of semiconductors with well -known solid -state properties, such as silicon [49] , and will be presented in Section 2.2.4 . In the situation shown in Figure 2.4 for L p = 20 µ m, the small integral excess carrier profi le and the small slope of ∆ p ( x ) at x = W (small current) show that, in this condition, the recombination processes dominate.…”
Section: Excess Minority Carrier Profi Lesmentioning
confidence: 99%
“…14 In the recent past a number of other groups have started to apply microwave or high frequency reflectometry in combination with conventional electrochemical methods in order to get more information about the complex charge carrier kinetics at semiconductor/electrolyte interfaces. [15][16][17][18] The photoinduced microwave reflection signal is proportional to the integrated excess charge carrier profile. 19,20 For given boundary conditions at the front and rear face, the sta-tionary profile is correlated to the surface concentration of excess carriers as outlined in.…”
Section: Introductionmentioning
confidence: 99%