“…A fine balance between re-sputtering and deposition allowed the thin-film thickness to be maintained constant at a value commensurate with the ion range so that a substantial intermixing of the materials A and B occurred. The layers produced had excellent adhesion and this DRM process allowed formation of ultra-thin surface-modified layers with interesting electrical properties (Colligon et al . 1984).…”
A review of the development of the ion-assisted sputter-deposition process is given. The special features of thin films produced by this technique are outlined and some main applications and future developments are discussed.
“…A fine balance between re-sputtering and deposition allowed the thin-film thickness to be maintained constant at a value commensurate with the ion range so that a substantial intermixing of the materials A and B occurred. The layers produced had excellent adhesion and this DRM process allowed formation of ultra-thin surface-modified layers with interesting electrical properties (Colligon et al . 1984).…”
A review of the development of the ion-assisted sputter-deposition process is given. The special features of thin films produced by this technique are outlined and some main applications and future developments are discussed.
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