Abstract:Processes of oxidation in the films Bi 2 Te 3 used in the various thermoelectric film devices working on air at various temperatures are investigated. Samples Bi 2 Te 3 of p-type thickness received 0,5-1,5 microns a method of discrete evaporation with additional homogenization of a steam phase. Changing technological conditions to raise dust and tempering, have received samples with a wide set of concentration of carriers of a charge from 5х10 18 up to 6х10 19 cm -3 . The fact of formation oxide layers proves to be trues the data electronography the analysis. The electronogram tempering samples alongside with dot reflexes from monocrystal blocks have the continuous polycrystalline rings adequate to a phase of structure Bi 2 O 3 . The method of diffraction electron with high energy -electrongraphy investigates formation of phases in the film condition, received by joint evaporation the components of system Bi -S. Experimentally investigated dependence of the near nuclear order in amorphous layered Bi 2 S 3 from conditions of reception of thin layers -besieged as under influence on molecular pair an external electric field intensity 3000Vxcm -1 , and outside of a field. It is established, that internuclear distances and radiuses of coordination spheres in layered, received in conditions of influence of an electric field, are a little shortened in comparison with those without influence of a field.