Applications of blow-up theory to thyristor turn-on

Paisana, J.; Santos, H. Abreu

doi:10.1109/16.974765

Cited by 1 publication

(1 citation statement)

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“…Under forward‐blocking conditions ( U A >0), junction J 2 is reverse biased and the other two junctions are forward biased. On the stationary state, the above equation system can be reduced to the well‐known and simple equation (Paisana and Santos, 2002) where the positive feedback is evidenced: Equation 3 where I C0 is associated to the reversed biased junction J 2 and the new α ′ fp takes in consideration the changing of the cathode emitter efficiency due to the effect of the short emitter resistance R s . On the off state, the total dynamic current gain sum is α˜ T = α˜ fp + α˜ fn <1.…”

Section: The Model Equationsmentioning

confidence: 99%

Applications of phase‐plane analysis to thyristor modelling

Paisana¹,

Santos²

2007

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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PurposeThe aim of this study is to develop a thyristor model based on the general equations of the semiconductors.Design/methodology/approachWithin the theory of the systems, the paper starts with the identification of the regenerative feedback current loop present in the p‐n‐p‐n structures. By using phase‐plane analysis and bifurcation theory, it analyses the stability of the different states of the devices and, at the same time, identifies the different characteristic critical points. The analysis of the non‐homogeneous solutions which can bifurcate from the uniform carrier distributions in the thyristor bases gives a further insight about the nature of the switching process.FindingsA link between the electric bistable characteristics of thyristors and their physical and geometrical properties was found.Practical implicationsThe main implication of this work is the acquisition of a method to implement a thyristor model for circuit analysis purposes where the different model parameters can be extracted from the respective device data sheets by using analytical methods.Originality/valueThe simulation of some particular characteristics of the thyristor by numerical methods has been described in other original works of the authors for the non‐homogeneous case. Here, the search is mainly to apply some of the more important findings of the work to a first‐level lumped thyristor model to be used in circuit analysis applications.

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Section: The Model Equationsmentioning

confidence: 99%